Reduced peripheral leakage current in pin photodetectors of Ge on n<sup>+</sup>-Si by P<sup>+</sup> implantation to compensate surface holes

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Koji Abe, Mikiya Kuzutani, Satoki Furuya, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Yasuhiko Ishikawa, "Reduced peripheral leakage current in pin photodetectors of Ge on n⁺-Si by P⁺ implantation to compensate surface holes" in IEICE TRANSACTIONS on Electronics, vol. , no. 0, pp. 0-0, January , doi: 10.1587/10.1587/transele.2023FUS0001.
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URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2023FUS0001/_advpub_f

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@ARTICLE{2023FUS0001,
author={Koji Abe, Mikiya Kuzutani, Satoki Furuya, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Yasuhiko Ishikawa, },
journal={IEICE TRANSACTIONS on Electronics},
title={Reduced peripheral leakage current in pin photodetectors of Ge on n⁺-Si by P⁺ implantation to compensate surface holes},
year={},
volume={},
number={0},
pages={0-0},
abstract={},
keywords={},
doi={10.1587/10.1587/transele.2023FUS0001},
ISSN={},
month={January},}

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TY - JOUR
TI - Reduced peripheral leakage current in pin photodetectors of Ge on n⁺-Si by P⁺ implantation to compensate surface holes
T2 - IEICE TRANSACTIONS on Electronics
SP - 0
EP - 0
AU - Koji Abe
AU - Mikiya Kuzutani
AU - Satoki Furuya
AU - Jose A. Piedra-Lorenzana
AU - Takeshi Hizawa
AU - Yasuhiko Ishikawa
PY -
DO - 10.1587/10.1587/transele.2023FUS0001
JO - IEICE TRANSACTIONS on Electronics
SN -
VL -
IS - 0
JA - IEICE TRANSACTIONS on Electronics
Y1 - January
AB -
ER -