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[Keyword] ferroelectric HfO2(2hit)

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  • The Effect of Inter Layers on the Ferroelectric Undoped HfO2 Formation

    Masakazu TANUMA  Joong-Won SHIN  Shun-ichiro OHMI  

     
    PAPER

      Pubricized:
    2022/06/27
      Vol:
    E105-C No:10
      Page(s):
    584-588

    In this research, we investigated the effect of Hf inter layer and chemical oxide on Si(100) substrate on the ferroelectric undoped HfO2 deposition. In case with 1 nm-thick Hf inter layer, equivalent oxide thickness (EOT) was decreased from 6.0 to 4.8 nm for 10 nm-thick HfO2 with decreasing annealing temperature. In case with 0.5 nm-thick chemical oxide, EOT was decreased from 3.9 to 3.6 nm in MFS diodes for 5 nm-thick HfO2. The MFSFET was fabricated with 10 nm-thick HfO2 utilizing Hf inter layer. The subthreshold swing was improved from 240 mV/dec. to 120 mV/dec. and saturation mobility was increased from 70 cm2/(Vs) to 140 cm2/(Vs) by inserting Hf inter layer.

  • The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100)

    Min Gee KIM  Shun-ichiro OHMI  

     
    PAPER

      Vol:
    E102-C No:6
      Page(s):
    435-440

    We have investigated post-metallization annealing (PMA) utilizing TiN gate electrode on the thin ferroelectric undoped HfO2 directly deposited on p-Si(100) by RF magnetron sputtering. By post-deposition annealing (PDA) process at 600°C/30 s in N2, the memory window (MW) in the C-V characteristics was observed in the Al/HfO2/p-Si(100) diodes with 15 to 24-nm-thick HfO2. However, it was not obtained when the thickness of HfO2 was 10 nm. On the other hand, the MW was observed for Pt/TiN/HfO2 (10 nm)/p-Si(100) diodes utilizing PMA process at 600°C/30 s. The MW was 0.5 V when the bias voltage was applied from -3 to 3 V.