The Effect of Inter Layers on the Ferroelectric Undoped HfO2 Formation
Summary :
In this research, we investigated the effect of Hf inter layer and chemical oxide on Si(100) substrate on the ferroelectric undoped HfO2 deposition. In case with 1 nm-thick Hf inter layer, equivalent oxide thickness (EOT) was decreased from 6.0 to 4.8 nm for 10 nm-thick HfO2 with decreasing annealing temperature. In case with 0.5 nm-thick chemical oxide, EOT was decreased from 3.9 to 3.6 nm in MFS diodes for 5 nm-thick HfO2. The MFSFET was fabricated with 10 nm-thick HfO2 utilizing Hf inter layer. The subthreshold swing was improved from 240 mV/dec. to 120 mV/dec. and saturation mobility was increased from 70 cm2/(Vs) to 140 cm2/(Vs) by inserting Hf inter layer.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E105-C No.10 pp.584-588
- Publication Date
- 2022/10/01
- Publicized
- 2022/06/27
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2021FUP0004
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Masakazu TANUMA
Tokyo Institute of Technology
Joong-Won SHIN
Tokyo Institute of Technology
Shun-ichiro OHMI
Tokyo Institute of Technology
Keyword
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Masakazu TANUMA, Joong-Won SHIN, Shun-ichiro OHMI, "The Effect of Inter Layers on the Ferroelectric Undoped HfO2 Formation" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 10, pp. 584-588, October 2022, doi: 10.1587/transele.2021FUP0004.
Abstract: In this research, we investigated the effect of Hf inter layer and chemical oxide on Si(100) substrate on the ferroelectric undoped HfO2 deposition. In case with 1 nm-thick Hf inter layer, equivalent oxide thickness (EOT) was decreased from 6.0 to 4.8 nm for 10 nm-thick HfO2 with decreasing annealing temperature. In case with 0.5 nm-thick chemical oxide, EOT was decreased from 3.9 to 3.6 nm in MFS diodes for 5 nm-thick HfO2. The MFSFET was fabricated with 10 nm-thick HfO2 utilizing Hf inter layer. The subthreshold swing was improved from 240 mV/dec. to 120 mV/dec. and saturation mobility was increased from 70 cm2/(Vs) to 140 cm2/(Vs) by inserting Hf inter layer.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021FUP0004/_p
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@ARTICLE{e105-c_10_584,
author={Masakazu TANUMA, Joong-Won SHIN, Shun-ichiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Effect of Inter Layers on the Ferroelectric Undoped HfO2 Formation},
year={2022},
volume={E105-C},
number={10},
pages={584-588},
abstract={In this research, we investigated the effect of Hf inter layer and chemical oxide on Si(100) substrate on the ferroelectric undoped HfO2 deposition. In case with 1 nm-thick Hf inter layer, equivalent oxide thickness (EOT) was decreased from 6.0 to 4.8 nm for 10 nm-thick HfO2 with decreasing annealing temperature. In case with 0.5 nm-thick chemical oxide, EOT was decreased from 3.9 to 3.6 nm in MFS diodes for 5 nm-thick HfO2. The MFSFET was fabricated with 10 nm-thick HfO2 utilizing Hf inter layer. The subthreshold swing was improved from 240 mV/dec. to 120 mV/dec. and saturation mobility was increased from 70 cm2/(Vs) to 140 cm2/(Vs) by inserting Hf inter layer.},
keywords={},
doi={10.1587/transele.2021FUP0004},
ISSN={1745-1353},
month={October},}
Copy
TY - JOUR
TI - The Effect of Inter Layers on the Ferroelectric Undoped HfO2 Formation
T2 - IEICE TRANSACTIONS on Electronics
SP - 584
EP - 588
AU - Masakazu TANUMA
AU - Joong-Won SHIN
AU - Shun-ichiro OHMI
PY - 2022
DO - 10.1587/transele.2021FUP0004
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2022
AB - In this research, we investigated the effect of Hf inter layer and chemical oxide on Si(100) substrate on the ferroelectric undoped HfO2 deposition. In case with 1 nm-thick Hf inter layer, equivalent oxide thickness (EOT) was decreased from 6.0 to 4.8 nm for 10 nm-thick HfO2 with decreasing annealing temperature. In case with 0.5 nm-thick chemical oxide, EOT was decreased from 3.9 to 3.6 nm in MFS diodes for 5 nm-thick HfO2. The MFSFET was fabricated with 10 nm-thick HfO2 utilizing Hf inter layer. The subthreshold swing was improved from 240 mV/dec. to 120 mV/dec. and saturation mobility was increased from 70 cm2/(Vs) to 140 cm2/(Vs) by inserting Hf inter layer.
ER -
English
