The search functionality is under construction.
The search functionality is under construction.

The Effect of Inter Layers on the Ferroelectric Undoped HfO2 Formation

Masakazu TANUMA, Joong-Won SHIN, Shun-ichiro OHMI

  • Full Text Views

    0

  • Cite this

Summary :

In this research, we investigated the effect of Hf inter layer and chemical oxide on Si(100) substrate on the ferroelectric undoped HfO2 deposition. In case with 1 nm-thick Hf inter layer, equivalent oxide thickness (EOT) was decreased from 6.0 to 4.8 nm for 10 nm-thick HfO2 with decreasing annealing temperature. In case with 0.5 nm-thick chemical oxide, EOT was decreased from 3.9 to 3.6 nm in MFS diodes for 5 nm-thick HfO2. The MFSFET was fabricated with 10 nm-thick HfO2 utilizing Hf inter layer. The subthreshold swing was improved from 240 mV/dec. to 120 mV/dec. and saturation mobility was increased from 70 cm2/(Vs) to 140 cm2/(Vs) by inserting Hf inter layer.

Publication
IEICE TRANSACTIONS on Electronics Vol.E105-C No.10 pp.584-588
Publication Date
2022/10/01
Publicized
2022/06/27
Online ISSN
1745-1353
DOI
10.1587/transele.2021FUP0004
Type of Manuscript
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category

Authors

Masakazu TANUMA
  Tokyo Institute of Technology
Joong-Won SHIN
  Tokyo Institute of Technology
Shun-ichiro OHMI
  Tokyo Institute of Technology

Keyword