1-2hit |
Heisuke SAKAI Yushi TSUJI Hideyuki MURATA
We integrate a pressure sensing capacitor and a low operation voltage OFET to develop a pressure sensor. The OFET was used as a readout device and an external pressure was loaded on the sensing capacitor. The OFET operates at less than 5 V and the change in the drain current in response to the pressure load (100 kPa) is two orders of magnitude.
In this paper, a 60 nm-thick ferroelectric film of poly(vinylidene fluoride–trifluoroethylene) on a flexible substrate of aluminum foil was fabricated and characterized. Compared to pristine silicon wafer, Al-foil has very large root-mean-square (RMS) roughness, thus presenting challenges for the fabrication of flat and uniform electronic devices on such a rough substrate. In particular, RMS roughness affects the leakage current of dielectrics, the uniformity of devices, and the switching time in ferroelectrics. To avoid these kinds of problems, a new thin film fabrication method adopting a detach-and-transfer technique has been developed. Here, 'detach' means that the ferroelectric film is detached from a flat substrate (sacrificial substrate), and 'transfer' refers to the process of the detached film being moved onto the rough substrate (main substrate). To characterize the dielectric property of the transferred film, polarization and voltage relationships were measured, and the results showed that a hysteresis loop could be obtained with low leakage current.