IEICE TRANSACTIONS on Electronics
Fabrication and Characterization of Ferroelectric Poly(Vinylidene Fluoride–Trifluoroethylene) (P(VDF-TrFE)) Thin Film on Flexible Substrate by Detach-and-Transferring
Summary :
In this paper, a 60 nm-thick ferroelectric film of poly(vinylidene fluoride–trifluoroethylene) on a flexible substrate of aluminum foil was fabricated and characterized. Compared to pristine silicon wafer, Al-foil has very large root-mean-square (RMS) roughness, thus presenting challenges for the fabrication of flat and uniform electronic devices on such a rough substrate. In particular, RMS roughness affects the leakage current of dielectrics, the uniformity of devices, and the switching time in ferroelectrics. To avoid these kinds of problems, a new thin film fabrication method adopting a detach-and-transfer technique has been developed. Here, 'detach' means that the ferroelectric film is detached from a flat substrate (sacrificial substrate), and 'transfer' refers to the process of the detached film being moved onto the rough substrate (main substrate). To characterize the dielectric property of the transferred film, polarization and voltage relationships were measured, and the results showed that a hysteresis loop could be obtained with low leakage current.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.5 pp.860-864
- Publication Date
- 2012/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.860
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Woo Young KIM, Hee Chul LEE, "Fabrication and Characterization of Ferroelectric Poly(Vinylidene Fluoride–Trifluoroethylene) (P(VDF-TrFE)) Thin Film on Flexible Substrate by Detach-and-Transferring" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 5, pp. 860-864, May 2012, doi: 10.1587/transele.E95.C.860.
Abstract: In this paper, a 60 nm-thick ferroelectric film of poly(vinylidene fluoride–trifluoroethylene) on a flexible substrate of aluminum foil was fabricated and characterized. Compared to pristine silicon wafer, Al-foil has very large root-mean-square (RMS) roughness, thus presenting challenges for the fabrication of flat and uniform electronic devices on such a rough substrate. In particular, RMS roughness affects the leakage current of dielectrics, the uniformity of devices, and the switching time in ferroelectrics. To avoid these kinds of problems, a new thin film fabrication method adopting a detach-and-transfer technique has been developed. Here, 'detach' means that the ferroelectric film is detached from a flat substrate (sacrificial substrate), and 'transfer' refers to the process of the detached film being moved onto the rough substrate (main substrate). To characterize the dielectric property of the transferred film, polarization and voltage relationships were measured, and the results showed that a hysteresis loop could be obtained with low leakage current.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.860/_p
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@ARTICLE{e95-c_5_860,
author={Woo Young KIM, Hee Chul LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication and Characterization of Ferroelectric Poly(Vinylidene Fluoride–Trifluoroethylene) (P(VDF-TrFE)) Thin Film on Flexible Substrate by Detach-and-Transferring},
year={2012},
volume={E95-C},
number={5},
pages={860-864},
abstract={In this paper, a 60 nm-thick ferroelectric film of poly(vinylidene fluoride–trifluoroethylene) on a flexible substrate of aluminum foil was fabricated and characterized. Compared to pristine silicon wafer, Al-foil has very large root-mean-square (RMS) roughness, thus presenting challenges for the fabrication of flat and uniform electronic devices on such a rough substrate. In particular, RMS roughness affects the leakage current of dielectrics, the uniformity of devices, and the switching time in ferroelectrics. To avoid these kinds of problems, a new thin film fabrication method adopting a detach-and-transfer technique has been developed. Here, 'detach' means that the ferroelectric film is detached from a flat substrate (sacrificial substrate), and 'transfer' refers to the process of the detached film being moved onto the rough substrate (main substrate). To characterize the dielectric property of the transferred film, polarization and voltage relationships were measured, and the results showed that a hysteresis loop could be obtained with low leakage current.},
keywords={},
doi={10.1587/transele.E95.C.860},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Fabrication and Characterization of Ferroelectric Poly(Vinylidene Fluoride–Trifluoroethylene) (P(VDF-TrFE)) Thin Film on Flexible Substrate by Detach-and-Transferring
T2 - IEICE TRANSACTIONS on Electronics
SP - 860
EP - 864
AU - Woo Young KIM
AU - Hee Chul LEE
PY - 2012
DO - 10.1587/transele.E95.C.860
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2012
AB - In this paper, a 60 nm-thick ferroelectric film of poly(vinylidene fluoride–trifluoroethylene) on a flexible substrate of aluminum foil was fabricated and characterized. Compared to pristine silicon wafer, Al-foil has very large root-mean-square (RMS) roughness, thus presenting challenges for the fabrication of flat and uniform electronic devices on such a rough substrate. In particular, RMS roughness affects the leakage current of dielectrics, the uniformity of devices, and the switching time in ferroelectrics. To avoid these kinds of problems, a new thin film fabrication method adopting a detach-and-transfer technique has been developed. Here, 'detach' means that the ferroelectric film is detached from a flat substrate (sacrificial substrate), and 'transfer' refers to the process of the detached film being moved onto the rough substrate (main substrate). To characterize the dielectric property of the transferred film, polarization and voltage relationships were measured, and the results showed that a hysteresis loop could be obtained with low leakage current.
ER -
English
