We observed Ga focused-ion-beam (FIB) irradiation effect onto diamond-like carbon (DLC) free-space nanowiring (FSW) fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD). A bended FIB-CVD FSW completely strained after Ga-FIB irradiation with raster scanning. This is probably caused by generation of compression stresses onto the surface of FSW, because the surface state of the nanowire changed with Ga-FIB irradiation. Transmission electron microscope (TEM) study indicates that Ga of FSW core part disappeared after Ga-FIB irradiation and a near-edge X-ray absorption fine structure (NEXAFS) analysis revealed C-Ga bond formation onto the surface. This is attributed to a movement of Ga from the core region to the surface, and/or an adsorption of Ga onto the surface by Ga-FIB scanned irradiation. The transformation of FSW is not only fascinating as physical phenomenon, but also effective for fabricating various 3-dimensional nanodevices equipped with nanowires utilized as electric wiring.