We observed Ga focused-ion-beam (FIB) irradiation effect onto diamond-like carbon (DLC) free-space nanowiring (FSW) fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD). A bended FIB-CVD FSW completely strained after Ga-FIB irradiation with raster scanning. This is probably caused by generation of compression stresses onto the surface of FSW, because the surface state of the nanowire changed with Ga-FIB irradiation. Transmission electron microscope (TEM) study indicates that Ga of FSW core part disappeared after Ga-FIB irradiation and a near-edge X-ray absorption fine structure (NEXAFS) analysis revealed C-Ga bond formation onto the surface. This is attributed to a movement of Ga from the core region to the surface, and/or an adsorption of Ga onto the surface by Ga-FIB scanned irradiation. The transformation of FSW is not only fascinating as physical phenomenon, but also effective for fabricating various 3-dimensional nanodevices equipped with nanowires utilized as electric wiring.
Ken-ichiro NAKAMATSU
University of Hyogo
Shinji MATSUI
University of Hyogo
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Ken-ichiro NAKAMATSU, Shinji MATSUI, "Structure Transformation of Bended Diamond-Like Carbon Free-Space Nanowiring by Ga Focused-Ion-Beam Irradiation" in IEICE TRANSACTIONS on Electronics,
vol. E99-C, no. 3, pp. 365-370, March 2016, doi: 10.1587/transele.E99.C.365.
Abstract: We observed Ga focused-ion-beam (FIB) irradiation effect onto diamond-like carbon (DLC) free-space nanowiring (FSW) fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD). A bended FIB-CVD FSW completely strained after Ga-FIB irradiation with raster scanning. This is probably caused by generation of compression stresses onto the surface of FSW, because the surface state of the nanowire changed with Ga-FIB irradiation. Transmission electron microscope (TEM) study indicates that Ga of FSW core part disappeared after Ga-FIB irradiation and a near-edge X-ray absorption fine structure (NEXAFS) analysis revealed C-Ga bond formation onto the surface. This is attributed to a movement of Ga from the core region to the surface, and/or an adsorption of Ga onto the surface by Ga-FIB scanned irradiation. The transformation of FSW is not only fascinating as physical phenomenon, but also effective for fabricating various 3-dimensional nanodevices equipped with nanowires utilized as electric wiring.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E99.C.365/_p
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@ARTICLE{e99-c_3_365,
author={Ken-ichiro NAKAMATSU, Shinji MATSUI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Structure Transformation of Bended Diamond-Like Carbon Free-Space Nanowiring by Ga Focused-Ion-Beam Irradiation},
year={2016},
volume={E99-C},
number={3},
pages={365-370},
abstract={We observed Ga focused-ion-beam (FIB) irradiation effect onto diamond-like carbon (DLC) free-space nanowiring (FSW) fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD). A bended FIB-CVD FSW completely strained after Ga-FIB irradiation with raster scanning. This is probably caused by generation of compression stresses onto the surface of FSW, because the surface state of the nanowire changed with Ga-FIB irradiation. Transmission electron microscope (TEM) study indicates that Ga of FSW core part disappeared after Ga-FIB irradiation and a near-edge X-ray absorption fine structure (NEXAFS) analysis revealed C-Ga bond formation onto the surface. This is attributed to a movement of Ga from the core region to the surface, and/or an adsorption of Ga onto the surface by Ga-FIB scanned irradiation. The transformation of FSW is not only fascinating as physical phenomenon, but also effective for fabricating various 3-dimensional nanodevices equipped with nanowires utilized as electric wiring.},
keywords={},
doi={10.1587/transele.E99.C.365},
ISSN={1745-1353},
month={March},}
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TY - JOUR
TI - Structure Transformation of Bended Diamond-Like Carbon Free-Space Nanowiring by Ga Focused-Ion-Beam Irradiation
T2 - IEICE TRANSACTIONS on Electronics
SP - 365
EP - 370
AU - Ken-ichiro NAKAMATSU
AU - Shinji MATSUI
PY - 2016
DO - 10.1587/transele.E99.C.365
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E99-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2016
AB - We observed Ga focused-ion-beam (FIB) irradiation effect onto diamond-like carbon (DLC) free-space nanowiring (FSW) fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD). A bended FIB-CVD FSW completely strained after Ga-FIB irradiation with raster scanning. This is probably caused by generation of compression stresses onto the surface of FSW, because the surface state of the nanowire changed with Ga-FIB irradiation. Transmission electron microscope (TEM) study indicates that Ga of FSW core part disappeared after Ga-FIB irradiation and a near-edge X-ray absorption fine structure (NEXAFS) analysis revealed C-Ga bond formation onto the surface. This is attributed to a movement of Ga from the core region to the surface, and/or an adsorption of Ga onto the surface by Ga-FIB scanned irradiation. The transformation of FSW is not only fascinating as physical phenomenon, but also effective for fabricating various 3-dimensional nanodevices equipped with nanowires utilized as electric wiring.
ER -