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Shane T. KEENAN Jia DU Emma E. MITCHELL Simon K. H. LAM John C. MACFARLANE Chris J. LEWIS Keith E. LESLIE Cathy P. FOLEY
We outline a number of high temperature superconducting Josephson junction-based devices including superconducting quantum interference devices (SQUIDs) developed for a wide range of applications including geophysical exploration, magnetic anomaly detection, terahertz (THz) imaging and microwave communications. All these devices are based on our patented technology for fabricating YBCO step-edge junction on MgO substrates. A key feature to the successful application of devices based on this technology is good stability, long term reliability, low noise and inherent flexibility of locating junctions anywhere on a substrate.
Several 2 nm seed layers were sputtered to increase coercivity (Hc) and anisotropy (Ku) of CoCrPt/Ti perpendicular recording media. Among them 2 nm Ag seed layer was very effective to increase Hc of (Co78Cr22)100-xPtx/Ti (x = 14, 20). However, the effect was more pronounced when (Co78Cr22)100-xPtx/Ti became thinner. In addition α[=4π(dM/dH)Hc] decreased when the Ag layer was used. The film thickness below which the seed Ag layer was effective was reduced with decreasing Pt content. However, the Ag seed layer did not promote (0002) texture of Ti and CoCrPt layers. Domain size was reduced when the Ag seed layer was used. The effects of Ag seed layer are thought to be due to change of exchange constant of the grains, for which the grain boundary plays an important role. Effects of film thickness and Pt content can also be explained successfully by the variation of exchange constant due to grain boundary. Some experimental evidence as well as crude mode for exchange constant variation are given.
Takehito SHIMATSU Migaku TAKAHASHI
The ultraclean sputtering process (UC-process) was newly introduced in the fabrication of Co62.5Ni30Cr7.5 and Co85.5Cr10.5Ta4 thin film media to establish a new concept in controlling microstructure. UC-process enables the realization of high coercive force Hc up to 2.7-3 kOe in both CoNiCr and CoCrTa media (15/50 nm magnetic/Cr thicknesses) without the decrement of saturation magnetization. The purification of the atmosphere during sputtering and the removal of the adsorbed oxygen impurity on the substrate surface play important roles in obtaining high Hc by applying the UC-process. This high Hc is mainly due to the realization of large magnetocrystalline anisotropy field of grains Hkgrain and low intergranular exchange coupling. UC-process realizes the adequate separation of grains by segregated grain boundaries even in media with thin Cr thickness of 2.5 nm, and enables grain size reduction without the remarkable increment in intergranular exchange coupling. In these media, the reduction of the grain size is most effective for the improvement of readback signal to media noise ratio S/Nm. In the media with grains sufficiently separated by segregated grain boundaries fabricated by the UC-process, control of grain size reduction and further increase in Hc/Hkgrain value through the decrement in intergranular magnetostatic coupling are required to obtain higher S/Nm value.
We have investigated the Josephson microwave self-radiation and the linewidth from different types of YBa2Cu3Oy(YBCO) grain boundary junctions: natural grain boundary junctions, step-edge junctions and bicrystal junctions. The Josephson self-rediation was directly observed using a total power radiometer receiver with receiving frequencies fREC=1.7-72 GHz. All junctions exhibited microwave self-radiation peaks with intensity of order of 10-12-10-14 W. For step-edge and bicrystal junction, they appeared at a voltage related to the Josephson frequency-voltage relation, V=n(h/2e)f, while for natural grain boundary junctions, the above relation did not hold, suggesting a Josephson medium property. For all types of junctions the observed Josephson linewidth deviated from the theoretical RSJ values due to the extra noise source in the grain boundary junction. The Josephson linewidth decreased with increasing the receiving frequency for all type of junctions. The reduction of Josephson linewidth at higher frequencies indicates that the critical current fluctuations due to a critical current spread at small bias voltages and a crystalline disorientation at the junction boundary generate an additional noise in grain boundary junctions.
High temperature superconductors are eminently suitable for use in high frequency devices because of their large energy gap. We fabricated weak link Josephson junctions connected in series. The junctions were constructed of EuBa2Cu3O7-x (EBCO) superconducting thin films on bicrystal MgO substrates. We measured their microwave broadband detection (video detection) characteristics. The responsivity (Sr) of the junctions depended on the bias current and their normal state resistance. The array junctions were effective in increasing normal state resistance. We obtained a maximum Sr of 22.6 [V/W].
Kazuya KINOSHITA Syuuji ARISAKA Takeshi KOBAYASHI
We have fabricated bi-epitaxial grain boundary junctions in YBa2Cu3O7δ (YBCO) thin films by using SrTiO3 (STO) seed layers on MgO(100) substrate. YBCO film growing over the STO seed layer has a different in-plane orientation from YBCO film without the seed layer, so artificial grain boundaries were created at the edge of the seed layer. The fabricated junctions have high Tc (up to 80 K), and constant-voltage current steps are observed in response to 12.1 GHz microwave radiation. Moreover, some of the junctions show characteristic current-voltage curves comprising not only an usual Josephson-like characteristic but also a low critical current due to the flux creep. This suggests that the two characteristic parts are likely to be connected in series at the junction region.
Bo HU Albert SEIDL Gertraud NEUMAYER Reinhold BUCHNER Karl HABERGER
Modeling and numerical simulation of crystal growth of Si film and heat transport in 3D structure were made for optimization of physical and geometrical parameters used during laser recrystallization. Based on simulations a new concept called micro-absorber was introduced for obtaining defect-free Si films.