IEICE TRANSACTIONS on Electronics
Process Simulation for Laser Recrystallization
Summary :
Modeling and numerical simulation of crystal growth of Si film and heat transport in 3D structure were made for optimization of physical and geometrical parameters used during laser recrystallization. Based on simulations a new concept called micro-absorber was introduced for obtaining defect-free Si films.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.2 pp.138-144
- Publication Date
- 1992/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
- Category
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Bo HU, Albert SEIDL, Gertraud NEUMAYER, Reinhold BUCHNER, Karl HABERGER, "Process Simulation for Laser Recrystallization" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 2, pp. 138-144, February 1992, doi: .
Abstract: Modeling and numerical simulation of crystal growth of Si film and heat transport in 3D structure were made for optimization of physical and geometrical parameters used during laser recrystallization. Based on simulations a new concept called micro-absorber was introduced for obtaining defect-free Si films.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_2_138/_p
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@ARTICLE{e75-c_2_138,
author={Bo HU, Albert SEIDL, Gertraud NEUMAYER, Reinhold BUCHNER, Karl HABERGER, },
journal={IEICE TRANSACTIONS on Electronics},
title={Process Simulation for Laser Recrystallization},
year={1992},
volume={E75-C},
number={2},
pages={138-144},
abstract={Modeling and numerical simulation of crystal growth of Si film and heat transport in 3D structure were made for optimization of physical and geometrical parameters used during laser recrystallization. Based on simulations a new concept called micro-absorber was introduced for obtaining defect-free Si films.},
keywords={},
doi={},
ISSN={},
month={February},}
Copy
TY - JOUR
TI - Process Simulation for Laser Recrystallization
T2 - IEICE TRANSACTIONS on Electronics
SP - 138
EP - 144
AU - Bo HU
AU - Albert SEIDL
AU - Gertraud NEUMAYER
AU - Reinhold BUCHNER
AU - Karl HABERGER
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1992
AB - Modeling and numerical simulation of crystal growth of Si film and heat transport in 3D structure were made for optimization of physical and geometrical parameters used during laser recrystallization. Based on simulations a new concept called micro-absorber was introduced for obtaining defect-free Si films.
ER -
English
