For tracking electromigration induced evolution of voids a diffuse interface model is applied. We assume an interconnect as two-dimensional electrically conducting via which contains initially a circular void. The diffuse interface governing equation was solved applying a finite element scheme with a robust local grid adaptation algorithm. Simulations were carried out for voids exposed to high current. An influence of the void dynamics on the resistance of interconnect is investigated. In the case of the interconnect via it was shown that a migrating void exactly follows the current flow, retaining its stability, but due to change of shape and position causes significant fluctuations in interconnect resistance.

We present several challenging gridding problems for multi-dimensional device and process simulation and discuss how new strategies might contribute to their solution. Formulating grid quality requirements for the standard Scharfetter-Gummel box method discretization in device simulation, we demonstrate how the offsetting techniques compares with quadtree grid generation methods and how they apply to modern device designs. Further we present a grid adaptation approach which respects the grid quality criteria and touch upon the main adaptation difficulties within device simulation. For the 3D moving boundary grids in process simulation we present a new algorithm.