An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration
Summary :
For tracking electromigration induced evolution of voids a diffuse interface model is applied. We assume an interconnect as two-dimensional electrically conducting via which contains initially a circular void. The diffuse interface governing equation was solved applying a finite element scheme with a robust local grid adaptation algorithm. Simulations were carried out for voids exposed to high current. An influence of the void dynamics on the resistance of interconnect is investigated. In the case of the interconnect via it was shown that a migrating void exactly follows the current flow, retaining its stability, but due to change of shape and position causes significant fluctuations in interconnect resistance.
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- IEICE TRANSACTIONS on Electronics Vol.E86-C No.3 pp.421-426
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- 2003/03/01
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- Special Section INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
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Hajdin CERIC, Siegfried SELBERHERR, "An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 3, pp. 421-426, March 2003, doi: .
Abstract: For tracking electromigration induced evolution of voids a diffuse interface model is applied. We assume an interconnect as two-dimensional electrically conducting via which contains initially a circular void. The diffuse interface governing equation was solved applying a finite element scheme with a robust local grid adaptation algorithm. Simulations were carried out for voids exposed to high current. An influence of the void dynamics on the resistance of interconnect is investigated. In the case of the interconnect via it was shown that a migrating void exactly follows the current flow, retaining its stability, but due to change of shape and position causes significant fluctuations in interconnect resistance.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_3_421/_p
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@ARTICLE{e86-c_3_421,
author={Hajdin CERIC, Siegfried SELBERHERR, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration},
year={2003},
volume={E86-C},
number={3},
pages={421-426},
abstract={For tracking electromigration induced evolution of voids a diffuse interface model is applied. We assume an interconnect as two-dimensional electrically conducting via which contains initially a circular void. The diffuse interface governing equation was solved applying a finite element scheme with a robust local grid adaptation algorithm. Simulations were carried out for voids exposed to high current. An influence of the void dynamics on the resistance of interconnect is investigated. In the case of the interconnect via it was shown that a migrating void exactly follows the current flow, retaining its stability, but due to change of shape and position causes significant fluctuations in interconnect resistance.},
keywords={},
doi={},
ISSN={},
month={March},}
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TY - JOUR
TI - An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration
T2 - IEICE TRANSACTIONS on Electronics
SP - 421
EP - 426
AU - Hajdin CERIC
AU - Siegfried SELBERHERR
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2003
AB - For tracking electromigration induced evolution of voids a diffuse interface model is applied. We assume an interconnect as two-dimensional electrically conducting via which contains initially a circular void. The diffuse interface governing equation was solved applying a finite element scheme with a robust local grid adaptation algorithm. Simulations were carried out for voids exposed to high current. An influence of the void dynamics on the resistance of interconnect is investigated. In the case of the interconnect via it was shown that a migrating void exactly follows the current flow, retaining its stability, but due to change of shape and position causes significant fluctuations in interconnect resistance.
ER -
English
