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Takahiro KOBAYASHI Naoto MATSUO Akira HEYA Shin YOKOYAMA
It is clarified that the SiN$_{mathrm{X}}$ film with a thickness of 1.7 nm, which was formed at the interface between the poly-Si source/drain and Al layer, suppresses the hump phenomenon of TFT with a channel length of 10, $mu $m. The mechanism of the hump suppression by this structure is discussed. It is thought that the fixed charge in the SiN$_{mathrm{X}}$ film suppresses the formation of the parasitic channel in the poly-Si edge by the Coulomb repulsion.