Improvement of Hump Phenomenon of Thin-Film Transistor by SiNX Film
Summary :
It is clarified that the SiNX film with a thickness of 1.7 nm, which was formed at the interface between the poly-Si source/drain and Al layer, suppresses the hump phenomenon of TFT with a channel length of 10 μm. The mechanism of the hump suppression by this structure is discussed. It is thought that the fixed charge in the SiNX film suppresses the formation of the parasitic channel in the poly-Si edge by the Coulomb repulsion.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E97-C No.11 pp.1112-1116
- Publication Date
- 2014/11/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E97.C.1112
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Takahiro KOBAYASHI
University of Hyogo
Naoto MATSUO
University of Hyogo
Akira HEYA
University of Hyogo
Shin YOKOYAMA
Hiroshima University
Keyword
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Takahiro KOBAYASHI, Naoto MATSUO, Akira HEYA, Shin YOKOYAMA, "Improvement of Hump Phenomenon of Thin-Film Transistor by SiN$_{mathrm{X}}$ Film" in IEICE TRANSACTIONS on Electronics,
vol. E97-C, no. 11, pp. 1112-1116, November 2014, doi: 10.1587/transele.E97.C.1112.
Abstract: It is clarified that the SiNX film with a thickness of 1.7 nm, which was formed at the interface between the poly-Si source/drain and Al layer, suppresses the hump phenomenon of TFT with a channel length of 10 μm. The mechanism of the hump suppression by this structure is discussed. It is thought that the fixed charge in the SiNX film suppresses the formation of the parasitic channel in the poly-Si edge by the Coulomb repulsion.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.1112/_p
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@ARTICLE{e97-c_11_1112,
author={Takahiro KOBAYASHI, Naoto MATSUO, Akira HEYA, Shin YOKOYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Improvement of Hump Phenomenon of Thin-Film Transistor by SiN$_{mathrm{X}}$ Film},
year={2014},
volume={E97-C},
number={11},
pages={1112-1116},
abstract={It is clarified that the SiNX film with a thickness of 1.7 nm, which was formed at the interface between the poly-Si source/drain and Al layer, suppresses the hump phenomenon of TFT with a channel length of 10 μm. The mechanism of the hump suppression by this structure is discussed. It is thought that the fixed charge in the SiNX film suppresses the formation of the parasitic channel in the poly-Si edge by the Coulomb repulsion.},
keywords={},
doi={10.1587/transele.E97.C.1112},
ISSN={1745-1353},
month={November},}
Copy
TY - JOUR
TI - Improvement of Hump Phenomenon of Thin-Film Transistor by SiN$_{mathrm{X}}$ Film
T2 - IEICE TRANSACTIONS on Electronics
SP - 1112
EP - 1116
AU - Takahiro KOBAYASHI
AU - Naoto MATSUO
AU - Akira HEYA
AU - Shin YOKOYAMA
PY - 2014
DO - 10.1587/transele.E97.C.1112
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2014
AB - It is clarified that the SiNX film with a thickness of 1.7 nm, which was formed at the interface between the poly-Si source/drain and Al layer, suppresses the hump phenomenon of TFT with a channel length of 10 μm. The mechanism of the hump suppression by this structure is discussed. It is thought that the fixed charge in the SiNX film suppresses the formation of the parasitic channel in the poly-Si edge by the Coulomb repulsion.
ER -
English
