In this research, we investigated the digital/analog-operation utilizing ferroelectric nondoped HfO2 (FeND-HfO2) as a blocking layer (BL) in the Hf-based metal/oxide/nitride/oxide/Si (MONOS) nonvolatile memory (NVM), so called FeNOS NVM. The Al/HfN0.5/HfN1.1/HfO2/p-Si(100) FeNOS diodes realized small equivalent oxide thickness (EOT) of 4.5 nm with the density of interface states (Dit) of 5.3 × 1010 eV-1cm-2 which were suitable for high-speed and low-voltage operation. The flat-band voltage (VFB) was well controlled as 80-100 mV with the input pulses of ±3 V/100 ms controlled by the partial polarization of FeND-HfO2 BL at each 2-bit state operated by the charge injection with the input pulses of +8 V/1-100 ms.