This paper addresses the problem of optimizing metalization patterns of back-end connections for the power-MOSFET based driver since the back-end connections tend to dominate the on-resistance Ron of the driver. We propose a heuristic algorithm to seek for better geometric shapes for the patterns targeting at minimizing Ron and at balancing the current distribution. In order to speed up the analysis, the equivalent resistance network of the driver is modified by inserting ideal switches to avoid repeatedly inverting the admittance matrix. With the behavioral model of the ideal switch, we can significantly accelerate the optimization. Simulation on three drivers from industrial TEG data demonstrates that our algorithm can reduce Ron effectively by shaping metals appropriately within a given routing area.