This paper proposes two high-performance multi-threshold-voltage CMOS (MTCMOS) F/Fs that are based on the CMOS hybrid-latch F/F and the CMOS semi-dynamic F/F. The proposed F/Fs utilize a clock-gating technique or a data recovery circuit in order to preserve their logic states in the power-down mode. They can change operation modes whether the clock level is high or low, and they provide outputs to fanouts in the power-down mode. When compared with existing clock-free MTCMOS F/Fs, the proposed MTCMOS hybrid-latch F/F shows maximum reduction of average delay, average power, and average power-delay product by 33%, 46%, and 63% for the supply voltage ranging from 0.8 V to 1.2 V. Although outperformed by the MTCMOS hybrid-latch F/F, the proposed MTCMOS semi-dynamic F/F inherits the benefit of the embedded logic from the CMOS SD F/F. Experimental results indicate that the MTCMOS semi-dynamic F/F can be used to implement a logic circuit that is superior to the one designed using the MTCMOS hybrid-latch F/F in speed, power, and area.

This paper describes the effects of operating temperature on delay time in a 1-V multi-threshold CMOS(MTCMOS) circuit, Delay-time analysis including the temperature factor shows that the delay-time variation of the CMOS circuit becomes amall for low-voltage operation and the variation is mainly determined by the threshold voltage and its variation-rate with temperature. As a design method of a MTCMOS circuit with both high-threshold and low-threshold MOSFETs, optimization of the low-threshold voltage at which the delay-time of the circuit is independent of operating temperature is described in detail. The validity of the design method is confirmed by the evaluation of a gate-chain TEG and a 1-V 12 K-gate digital-filter LSI fabricated with o.5-µm MTCMOS technology.