Process-related variation of optimal noise figures (Fo) in pulse-doped GaAs MESFET's is discussed in this paper. Fluctuation in gate length of the proposed devices is shown to be a dominant source of variation in noise parameters. The statistical distribution of the optimal noise figure is modeled by using the gaussian approximation of the distribution in gate length; the probability density function of Fo is derived. A comparison between the calculated results by the derived probability density function and the measured distribution of Fo showed good agreement.