Modeling on Statistical Distribution of Optimal Noise Figure in Pulse-Doped GaAs MESFET's
Summary :
Process-related variation of optimal noise figures (Fo) in pulse-doped GaAs MESFET's is discussed in this paper. Fluctuation in gate length of the proposed devices is shown to be a dominant source of variation in noise parameters. The statistical distribution of the optimal noise figure is modeled by using the gaussian approximation of the distribution in gate length; the probability density function of Fo is derived. A comparison between the calculated results by the derived probability density function and the measured distribution of Fo showed good agreement.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.10 pp.1442-1448
- Publication Date
- 1996/10/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Microwave and Millimeter Wave Technology
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Nobuo SHIGA, "Modeling on Statistical Distribution of Optimal Noise Figure in Pulse-Doped GaAs MESFET's" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 10, pp. 1442-1448, October 1996, doi: .
Abstract: Process-related variation of optimal noise figures (Fo) in pulse-doped GaAs MESFET's is discussed in this paper. Fluctuation in gate length of the proposed devices is shown to be a dominant source of variation in noise parameters. The statistical distribution of the optimal noise figure is modeled by using the gaussian approximation of the distribution in gate length; the probability density function of Fo is derived. A comparison between the calculated results by the derived probability density function and the measured distribution of Fo showed good agreement.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_10_1442/_p
Copy
@ARTICLE{e79-c_10_1442,
author={Nobuo SHIGA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Modeling on Statistical Distribution of Optimal Noise Figure in Pulse-Doped GaAs MESFET's},
year={1996},
volume={E79-C},
number={10},
pages={1442-1448},
abstract={Process-related variation of optimal noise figures (Fo) in pulse-doped GaAs MESFET's is discussed in this paper. Fluctuation in gate length of the proposed devices is shown to be a dominant source of variation in noise parameters. The statistical distribution of the optimal noise figure is modeled by using the gaussian approximation of the distribution in gate length; the probability density function of Fo is derived. A comparison between the calculated results by the derived probability density function and the measured distribution of Fo showed good agreement.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - Modeling on Statistical Distribution of Optimal Noise Figure in Pulse-Doped GaAs MESFET's
T2 - IEICE TRANSACTIONS on Electronics
SP - 1442
EP - 1448
AU - Nobuo SHIGA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1996
AB - Process-related variation of optimal noise figures (Fo) in pulse-doped GaAs MESFET's is discussed in this paper. Fluctuation in gate length of the proposed devices is shown to be a dominant source of variation in noise parameters. The statistical distribution of the optimal noise figure is modeled by using the gaussian approximation of the distribution in gate length; the probability density function of Fo is derived. A comparison between the calculated results by the derived probability density function and the measured distribution of Fo showed good agreement.
ER -
English
