We investigated the low temperature formation of Pd2Si on Si(100) with TiN encapsulating layer formed at 500°C/1 min. Furthermore, the dopant segregation process was performed with ion dose of 1x1015 cm-2 for B+. The uniform Pd2Si was successfully formed with low sheet resistance of 10.4 Ω/sq. Meanwhile, the PtSi formed on Si(100) showed rough surface morphology if the silicidation temperature was 500°C. The estimated Schottky barrier height to hole of 0.20 eV (qφBp) was realized for n-Si(100).

In this paper, a method of separating the effects of the thermal diffusivity, durations and integral powers of the bridge and arc on the temperature rise of AgPd contacts was proposed. First, the effects of the Pd content on the durations and integral powers of the bridge and arc, and the temperature rise of the contacts were discussed. Because the integral power of bridge was larger than that of the arc under our experimental conditions of 40 V open-circuit, 5 A close-circuit and 100 µm/s opening velocity, the temperature rise of the contacts was dominated by the bridge. No remarked difference in bridge duration can be seen among the six materials. Although the integral power of the bridge in the case of Pd was maximum, the maximum temperature rise of the contact was observed in the case of AgPd60. To clarify the contribution of each factor, the effect of thermal diffusivity on the temperature rise of the contact was evaluated by the finite-difference time-domain (FDTD) method. In the case of Pd, because its thermal diffusivity was largest, heat diffused rapidly. On the other hand, the thermal diffusivity in the case of AgPd60 was small, and heat diffused slowly to the holders. The maximum temperature rise was observed in the case of AgPd60. It was demonstrated that the proposed method of separating the effects of thermal diffusivity, durations and integral powers of the bridge and arc on the temperature rise of contacts is effective in enabling us to understand contact phenomena.

Connector contact resistance may become unstable if fretting occurs. Such motions result in the formation of insulating oxides on the surface of base metal contacts or organic polymers on contacts made of platinum group metals. These degradations are termed fretting corrosion and frictional polymerization, respectively. Motion may be caused by external vibration or fluctuating temperature. The lower the frequency of movement, the fewer the number of cycles to contact failure. Increasing the contact normal load or reducing the amplitude of movement may stabilize the connection. Tin and palladium and many of their alloys are especially prone to fretting failure. Tin mated to gold is worse than all-tin contacts. Gold and high gold-silver alloys that are softer when mated to palladium stabilize contact resistance since these metals transfer to the palladium during fretting; but flash gold coatings on palladium and palladium nickel offer marginal improvement for the gold often quickly wears out. Dissimilar metal contact pairs show behaviors like that of the metal which predominates on the surface by transfer. Contact lubricants can often prevent fretting failures and may even restore unlubricated failed contacts to satisfactory service.