This paper describes the results of a series of laboratory experiments for performance evaluations of our proposed Maximum Likelihood Sequence Estimation (MLSE) based interference canceller, the Interference Canceling Equalizer (ICE), which can cancel both co-channel interference (CCI) and inter-symbol interference (ISI). To verify the feasibility of ICE for the Japanese cellular communications system, a standard of which has been released under the name of Personal Digital Cellular (PDC) system, a prototype system was constructed using 27 TI TMS320C40 Digital Signal Processor (DSP) chips. The ICE prototype works in real-time on the PDC air interface, major specifications of which are π/4 QDPSK 21 k symbols/s 3-channel time-division multiple-access (TDMA). Two-branch diversity reception is used to enhance the signal detection performance of ICE. In the experiments, BER performances were evaluated using the prototype system. Under a single-path Rayleigh fading and a single CCI condition, the ICE receiver attains the BER of less than 310-2 with the negative values of the average CIR: for fD = 5 Hz and 40 Hz, the average CIR more than -20 dB and -10 dB, respectively. Under a double-path Rayleigh fading and a single CCI condition, the ICE receiver attains the BER of less than 1.510-2 with the negative values of the average CIR: for fD = 5 Hz and 40 Hz, the average CIR more than -20 dB and -10 dB, respectively. The laboratory test results suggest that the ICE receiver has potential for system capacity enhancement.

This paper describes 950 GHz power performance of double-doped AlGaAs/InGaAs/AlGaAs heterojunction field-effect transistors (HJFET) operated at a drain bias voltage ranging from 2.5 to 3.5 V. The developed 1.0 µm gatelength HJFET exhibited a maximum drain current (Imax) of 500 mA/mm, a transconductance (gm) of 300 mS/mm, and a gate-to-drain breakdown voltage of 11 V. Operated at 3.0 V, a 17.5 mm gate periphery HJFET showed 1.4 W Pout and -50.3 dBc adjacent channel leakage power at a 50 kHz off-carrier frequency from 950 MHz with 50% PAE. Harmonic balance simulations revealed that the flat gm characteristics of the HJFET with respect to gate bias voltage are effective to suppress intermodulation distortion under large signal operation. The developed HJFET has great potential for small-sized digital cellular power applications operated at a low DC supply voltage.