It is well known that the power transfer efficiency (PTE) of a wireless power transfer (WPT) system is maximized at a specific coupling coefficient under the fixed system parameters. For an adaptive WPT system, various attempts have been made to achieve the maximum PTE by changing the system parameters. Applying the input matching networks to the WPT system is one of the most popular implementation methods to change the source impedance and improve the PTE. In this paper, we derive the optimum source condition for the given load and the achievable maximum PTE under the optimum source condition in a closed-form. Furthermore, we propose a method to estimate the input impedance, without feedback information, and an input matching network structure that transforms the source impedance into the optimum source obtained from the estimated input impedance. The proposed technique is successfully implemented at a resonant frequency of 13.56MHz. The experimental results are in close agreement with the theoretical achievable maximum PTE and show that the use of only a single matching network can sufficiently achieve a PTE close to the ideal maximum PTE.

An impedance-isolation technique is proposed for on-chip ESD protection design for radio-frequency (RF) integrated circuits (ICs), which has been successfully verified in a 0.25-µm CMOS process with thick top-layer metal. With the resonance of LC-tank at the operating frequency of the RF circuit, the impedance (especially, the parasitic capacitance) of the ESD protection devices can be isolated from the RF input node of low-noise amplifier (LNA). Therefore, the LNA can be co-designed with the proposed impedance-isolation technique to simultaneously achieve excellent RF performance and high ESD robustness. The power gain (S21-parameter) and noise figure of the ESD protection circuits with the proposed impedance-isolation technique have been experimentally measured and compared to those with the conventional double-diodes ESD protection scheme. The proposed impedance-isolation technique had been demonstrated to be suitable for on-chip ESD protection design for RF ICs.

In this paper, a novel methodology for designing and analyzing high performance sigma-delta leapfrog modulators for ultra-high resolution analog-to-digital (A/D) converters is presented. The less sensitive topology, the leapfrog topology, in component variations is analyzed by considering the noise transfer function (NTF). By using theoretical analysis, the loop coefficients are constrained to a small, clear and definite range called the stable region (SR). With the output voltage limited within 2 V, an absolutely stable region (ASR) is obtained. A program that analyzes and generates the required coefficients is constructed for easily designing this topology. For a 256 over-sampling ratio (OSR) and the coefficients from ASR, the signal to noise ratio (SNR) and dynamic range (DR) are 105 dB and 100 dB, respectively. In accordance with the behavior simulation results, the system is not only stable and efficient but also suitable for high-resolution applications.

The low phase noise frequency source to be used for measurements and so on realizes by oscillator having highly output signal power against output noise power. SAW devices can be used with high power than BAW devices. So we examine on configuration of SAW oscillator circuits with the power gain. In this paper we shall discuss a configuration of oscillator circuit to obtain an extremely low phase noise and an oscillator operating at a non-reactive frequency of SAW resonator.

Loosely wound short-arm two-wire Archimedean spiral antennas are investigated. It is shown that good circularly polarized waves with axial ratio less than 2 dB are obtained when the outer circumference C of the spiral antenna is in the range of about 1. 3λ < C < 1. 5λ, where λ is the free-space wavelength. To improve the antenna characteristics further, spiral antennas combined with a parasitic loop are examined. It is clarified that the parasitic loop greatly contributes to the improvement of the axial ratio and power gain.