In this paper, a linear array of 4 leaf-shaped bowtie slot antennas is proposed for use in quasi-millimeter wave band. The slot antennas array is designed to operate at 28GHz frequency band. The leaf-shaped bowtie slot antenna is a type of self-complementary antenna with low profile and low cost of fabrication. The proposed antenna structure offers improvement in radiation pattern, gain, and -10dB impedance bandwidth. Through out of this paper radiation pattern, actual gain, and -10dB impedance bandwidth are evaluated by Finite Different Time Domain (FDTD) simulation. Antenna characteristics are analyzed in the frequency range of 27GHz to 29GHz. To improve antenna characteristics such as actual gain and -10dB impedance bandwidth, a dielectric superstrate layer with relative permittivity of 10.2 is placed on top of ground plane of the slot antennas array. Three antenna structures are introduced and compared. With two layers of dielectric superstrate on top of the antennas ground plane, analysis results show that -10dB impedance bandwidth occupies the frequency range of 27.17GHz to 28.39GHz. Therefore, the operational impedance bandwidth is 1.22GHz. Maximum actual gain of the slot antennas array with two dielectric superstrate layers is 20.49dBi and -3dB gain bandwidth occupies the frequency range of 27.02GHz to 28.57GHz. To validate the analysis results, prototype of the designed slot antennas array is fabricated. Characteristics of the slot antennas array are measured and compared with the analysis results.

This paper presents the strategy of MOS varactor's high-Q optimization, a novel scalable model for the quasi-millimeter-wave MOS varactors, and confirmation results by discrete MOS varactors and VCO measurements. To realize a high-Q MOS varactor in the quasi-millimeter-wave region, low MOS varactor capacitance and low series resistance of unit cell are essential. Downsizing is a key to realize both low capacitance and low resistance. However, it is induced by Cmax/Cmin reduction, simultaneously. Therefore, scalable MOS varactor model is necessary to use optimum MOS varactor to cover various application requirements using same process. Decreasing the MOS varactor's size of W/L =2µm/2µm to 0.5µm/0.26µm, the Q factor increased sevenfold at f =20GHz but Cmax/Cmin is reduced by 60%, by using conventional PSP model, an error of approximately 20% is shown. Proposed model has been improved its accuracy from 18.9% to 0.2% for N+ MOS varactor and from 22.1% to 0.8% for P+ MOS varactor, for minimum size of MOS varactor even if model covers wide dimension range. Also, it has been confirmed this model is covered in two types of layouts. Oscillation frequency and phase noise also have been confirmed by three types of 22GHz VCOs. The accuracy of oscillation frequency is less than 2.5% and that of phase noise at 1MHz offset from carrier is less than 5dB.