A hexagonal waveguide branch line coupler suitable for additive manufacturing is proposed in this study, and its design method is elucidated. The additive manufactured Ka-band coupler exhibits characteristics similar to those of a machined coupler, but its weight and cost are reduced by 40% and 60%, respectively. Its effectiveness is also confirmed in this study.

Using various rare earth sesquioxides as additives, silicon nitride (Si3N4) samples were sintered at 1700 for 4 h by millimeter-wave heating performed in an applicator fed by a 28 GHz Gyrotron source under a nitrogen pressure of 0.1 MPa. A comparative study of densification, grain growth behavior and mechanical properties of silicon nitride fabricated by millimeter-wave and conventional sintering was carried out. Bulk densities were measured by Archimedes' technique. Except for the Eu2O3 containing sample, all samples were densified to relative densities of above 97.0%. Microstructure of the specimens was analyzed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). To investigate quantitatively the effect of millimeter-wave heating on grain growth, image analysis was carried out for grains in the specimens. Fracture toughness was determined by the indentation-fracture method (IF method) in accordance with Japan Industrial Standards (JIS). Fully dense millimeter-wave sintered silicon nitride presenting a bimodal microstructure exhibited higher values of fracture toughness than materials processed by conventional heating techniques. Results indicate that millimeter-wave sintering is more effective in enhancing the grain growth and in producing the bimodal microstructure than conventional heating. It was also confirmed that localized runaway in temperature, depending upon the sintering additives, can occur under millimeter-wave heating.

Recently, millimeter-wave energy has attracted much attention as a new and novel energy source for materials processing. In the present paper, several unique features of millimeter-wave heating in materials processing are reviewed briefly and development of materials processing machines by mm-wave radiation is also described. In the application of mm-wave heating, sintering of high quality alumina ceramics having a high bending strength of about 800 MPa are first demonstrated and followed by preparation of aluminum nitride with a high thermal conductivity over 200 W/(mK) at a sintering temperature lower by 473-573 K than the conventional method, by which this processing can be expected to be one of the environment-conscious energy saving processes. A newly developed post-annealing process with mm-wave radiation is described, in which crystallization of amorphous perovskite oxide films prepared by plasma sputtering was attained at temperatures lower than that by the conventional heating and the dielectric constant of post-annealed SrTiO3 (STO) films by mm-wave radiation were drastically improved.