CMOS poly-Si thin-film transistors (TFTs) were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process. On-off current ratios for both types of poly-Si TFTs were improved by SALA. The field effect mobility of n- and p-channel TFTs is 84 cm2/Vs and 75 cm2/Vs, respectively.

The characteristics of several femtosecond solid-state laser systems are described illustrating the diversity of the operational parameters of these lasers. The systems include Pr:YLF, Cr:LiSAF, Cr:Forsterite and Cr:YAG, with wavelength of operation from the visible to the near infra-red. Particular emphasis is placed upon compact, efficient pumping schemes, all-solid-state diode-pumped femtosecond oscillator configurations and newly configured, highly-efficient, tunable, femtosecond lasers pumped by high power fibre lasers.