A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors

Ryoichi ISHIHARA; Arie GLAZER; Yoel RAAB; Peter RUSIAN; Mannie DORFAN; Benzi LAVI; Ilya LEIZERSON; Albert KISHINEVSKY; Yvonne van ANDEL; Xin CAO; Wim METSELAAR; Kees BEENAKKER; Sara STOLYAROVA; Yael NEMIROVSKY

doi:10.1093/ietele/e89-c.10.1377

A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors

Full Text Views

0

Cite this

Summary :

CMOS poly-Si thin-film transistors (TFTs) were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process. On-off current ratios for both types of poly-Si TFTs were improved by SALA. The field effect mobility of n- and p-channel TFTs is 84 cm²/Vs and 75 cm²/Vs, respectively.

Publication: IEICE TRANSACTIONS on Electronics Vol.E89-C No.10 pp.1377-1382

Publication Date: 2006/10/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e89-c.10.1377

Type of Manuscript: Special Section INVITED PAPER (Special Section on Electronic Displays)

Category

Cite this

Copy

Ryoichi ISHIHARA, Arie GLAZER, Yoel RAAB, Peter RUSIAN, Mannie DORFAN, Benzi LAVI, Ilya LEIZERSON, Albert KISHINEVSKY, Yvonne van ANDEL, Xin CAO, Wim METSELAAR, Kees BEENAKKER, Sara STOLYAROVA, Yael NEMIROVSKY, "A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors" in IEICE TRANSACTIONS on Electronics, vol. E89-C, no. 10, pp. 1377-1382, October 2006, doi: 10.1093/ietele/e89-c.10.1377.
Abstract: CMOS poly-Si thin-film transistors (TFTs) were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process. On-off current ratios for both types of poly-Si TFTs were improved by SALA. The field effect mobility of n- and p-channel TFTs is 84 cm²/Vs and 75 cm²/Vs, respectively.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.10.1377/_p

Copy

@ARTICLE{e89-c_10_1377,
author={Ryoichi ISHIHARA, Arie GLAZER, Yoel RAAB, Peter RUSIAN, Mannie DORFAN, Benzi LAVI, Ilya LEIZERSON, Albert KISHINEVSKY, Yvonne van ANDEL, Xin CAO, Wim METSELAAR, Kees BEENAKKER, Sara STOLYAROVA, Yael NEMIROVSKY, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors},
year={2006},
volume={E89-C},
number={10},
pages={1377-1382},
abstract={CMOS poly-Si thin-film transistors (TFTs) were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process. On-off current ratios for both types of poly-Si TFTs were improved by SALA. The field effect mobility of n- and p-channel TFTs is 84 cm²/Vs and 75 cm²/Vs, respectively.},
keywords={},
doi={10.1093/ietele/e89-c.10.1377},
ISSN={1745-1353},
month={October},}

Copy

TY - JOUR
TI - A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 1377
EP - 1382
AU - Ryoichi ISHIHARA
AU - Arie GLAZER
AU - Yoel RAAB
AU - Peter RUSIAN
AU - Mannie DORFAN
AU - Benzi LAVI
AU - Ilya LEIZERSON
AU - Albert KISHINEVSKY
AU - Yvonne van ANDEL
AU - Xin CAO
AU - Wim METSELAAR
AU - Kees BEENAKKER
AU - Sara STOLYAROVA
AU - Yael NEMIROVSKY
PY - 2006
DO - 10.1093/ietele/e89-c.10.1377
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2006
AB - CMOS poly-Si thin-film transistors (TFTs) were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process. On-off current ratios for both types of poly-Si TFTs were improved by SALA. The field effect mobility of n- and p-channel TFTs is 84 cm²/Vs and 75 cm²/Vs, respectively.
ER -