We prepared alumina passivation films for p-type silicon substrates by sol-gel wet process mainly using aluminum isopropoxide (Al(O-i-Pr)3) as a precursor material. The precursor solution was spin-coated onto p-type silicon substrates and then calcined for 1 hour in air. Minority carrier lifetime of the passivated wafers was evaluated for different calcination temperature conditions. We also compared the passivation quality of the alumina passivation films using different alumina precursor, aluminum acetylacetonate (Al(acac)3). Obtained effective minority carrier lifetime indicated that the lifetime is strongly depends on the calcination temperature. The substrate calcined below 400°C shows relatively short lifetime below 100 µsec. On the other hand, the substrate calcined around 500°C to 600°C indicates lifetime from 250 to 300 µsec. Calcination temperature dependence of the lifetime for the samples using Al(O-i-Pr)3 precursors shows almost the same as that using Al(acac)3.

We fabricated silicon solar cells with spin-coated sol-gel alumina passivation layers on the rear side. Spin-coated alumina passivation films have moderate passivation quality and are inferior to atomic layer deposited passivation films. However, low-cost and low temperature process of the sol-gel deposition is still beneficial for the cells using commercially available Cz silicon wafers. Thus, we consider an applicability of the spin-coated alumina passivation layer for rear side passivation. Dependence of cell efficiency on contact spacing and contact diameter of a rear electrode was investigated by both experiments and numerical calculation. The experimental results indicated that conversion efficiency of the cell is enhanced from 9.1% to 11.1% by optimizing an aperture ratio and contact spacing of the rear passivation layers. Numerical calculation indicated that small contact diameter with low aperture ratio of a rear passivation layer is preferable to achieve good cell performance in our experimental condition. We confirmed the effectivity of the spin-coated alumina passivation films for rear surface passivation of the low-cost silicon solar cells.

The realization of scientific manufacturing of ULSIs in the 21st century will require the development of a technical infrastructure of "Ultra Clean Technology" and the firm establishment of the three principles of high performance processes. Three principles are 1)Ultra Clean Si Wafer Surface, 2)Ultra Clean Processing Environment, and 3)Perfect Parameter controlled process. This paper describes the methods of resolving the problems inherent in Ultra Clean Technology, taking as examples issues in quarter-micron or more advanced semiconductor process and manufacturing equipment, particularly when faced with the challenges of plasma dry etching. Issues indispensable to the development of tomorrow's highly accurate and reliable plasma dry etching equipment are the development of technologies for the accurate measurement of plasma parameters, ultra clean gas delivery systems, chamber cleaning technology on an in-situ basis, and simulating the plasma chemistry.This paper also discusses the standardization of semiconductor manufacturing equipment, which is considered one of the ways to reduce the steep rise in production line construction costs. The establishment of Ultra Clean Technology also plays a vital role in this regard.