Alumina Passivation Films Prepared by Wet Process for Silicon Solar Cells Using Aluminum Isopropoxide as a Sol-Gel Precursor
Summary :
We prepared alumina passivation films for p-type silicon substrates by sol-gel wet process mainly using aluminum isopropoxide (Al(O-i-Pr)3) as a precursor material. The precursor solution was spin-coated onto p-type silicon substrates and then calcined for 1 hour in air. Minority carrier lifetime of the passivated wafers was evaluated for different calcination temperature conditions. We also compared the passivation quality of the alumina passivation films using different alumina precursor, aluminum acetylacetonate (Al(acac)3). Obtained effective minority carrier lifetime indicated that the lifetime is strongly depends on the calcination temperature. The substrate calcined below 400°C shows relatively short lifetime below 100 µsec. On the other hand, the substrate calcined around 500°C to 600°C indicates lifetime from 250 to 300 µsec. Calcination temperature dependence of the lifetime for the samples using Al(O-i-Pr)3 precursors shows almost the same as that using Al(acac)3.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E100-C No.1 pp.108-111
- Publication Date
- 2017/01/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E100.C.108
- Type of Manuscript
- BRIEF PAPER
- Category
- Semiconductor Materials and Devices
Authors
Ryosuke WATANABE
Seikei University
Mizuho KAWASHIMA
Seikei University
Yoji SAITO
Seikei University
Keyword
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Ryosuke WATANABE, Mizuho KAWASHIMA, Yoji SAITO, "Alumina Passivation Films Prepared by Wet Process for Silicon Solar Cells Using Aluminum Isopropoxide as a Sol-Gel Precursor" in IEICE TRANSACTIONS on Electronics,
vol. E100-C, no. 1, pp. 108-111, January 2017, doi: 10.1587/transele.E100.C.108.
Abstract: We prepared alumina passivation films for p-type silicon substrates by sol-gel wet process mainly using aluminum isopropoxide (Al(O-i-Pr)3) as a precursor material. The precursor solution was spin-coated onto p-type silicon substrates and then calcined for 1 hour in air. Minority carrier lifetime of the passivated wafers was evaluated for different calcination temperature conditions. We also compared the passivation quality of the alumina passivation films using different alumina precursor, aluminum acetylacetonate (Al(acac)3). Obtained effective minority carrier lifetime indicated that the lifetime is strongly depends on the calcination temperature. The substrate calcined below 400°C shows relatively short lifetime below 100 µsec. On the other hand, the substrate calcined around 500°C to 600°C indicates lifetime from 250 to 300 µsec. Calcination temperature dependence of the lifetime for the samples using Al(O-i-Pr)3 precursors shows almost the same as that using Al(acac)3.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.108/_p
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@ARTICLE{e100-c_1_108,
author={Ryosuke WATANABE, Mizuho KAWASHIMA, Yoji SAITO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Alumina Passivation Films Prepared by Wet Process for Silicon Solar Cells Using Aluminum Isopropoxide as a Sol-Gel Precursor},
year={2017},
volume={E100-C},
number={1},
pages={108-111},
abstract={We prepared alumina passivation films for p-type silicon substrates by sol-gel wet process mainly using aluminum isopropoxide (Al(O-i-Pr)3) as a precursor material. The precursor solution was spin-coated onto p-type silicon substrates and then calcined for 1 hour in air. Minority carrier lifetime of the passivated wafers was evaluated for different calcination temperature conditions. We also compared the passivation quality of the alumina passivation films using different alumina precursor, aluminum acetylacetonate (Al(acac)3). Obtained effective minority carrier lifetime indicated that the lifetime is strongly depends on the calcination temperature. The substrate calcined below 400°C shows relatively short lifetime below 100 µsec. On the other hand, the substrate calcined around 500°C to 600°C indicates lifetime from 250 to 300 µsec. Calcination temperature dependence of the lifetime for the samples using Al(O-i-Pr)3 precursors shows almost the same as that using Al(acac)3.},
keywords={},
doi={10.1587/transele.E100.C.108},
ISSN={1745-1353},
month={January},}
Copy
TY - JOUR
TI - Alumina Passivation Films Prepared by Wet Process for Silicon Solar Cells Using Aluminum Isopropoxide as a Sol-Gel Precursor
T2 - IEICE TRANSACTIONS on Electronics
SP - 108
EP - 111
AU - Ryosuke WATANABE
AU - Mizuho KAWASHIMA
AU - Yoji SAITO
PY - 2017
DO - 10.1587/transele.E100.C.108
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2017
AB - We prepared alumina passivation films for p-type silicon substrates by sol-gel wet process mainly using aluminum isopropoxide (Al(O-i-Pr)3) as a precursor material. The precursor solution was spin-coated onto p-type silicon substrates and then calcined for 1 hour in air. Minority carrier lifetime of the passivated wafers was evaluated for different calcination temperature conditions. We also compared the passivation quality of the alumina passivation films using different alumina precursor, aluminum acetylacetonate (Al(acac)3). Obtained effective minority carrier lifetime indicated that the lifetime is strongly depends on the calcination temperature. The substrate calcined below 400°C shows relatively short lifetime below 100 µsec. On the other hand, the substrate calcined around 500°C to 600°C indicates lifetime from 250 to 300 µsec. Calcination temperature dependence of the lifetime for the samples using Al(O-i-Pr)3 precursors shows almost the same as that using Al(acac)3.
ER -
English
