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[Keyword] thermodynamic(2hit)

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  • Influence of Contact Material Vapor on Thermodynamic and Transport Properties of Arc Plasmas Occurring between Ag and Ag/SnO2 contact pairs

    Takuya HARA  Junya SEKIKAWA  

     
    BRIEF PAPER

      Vol:
    E97-C No:9
      Page(s):
    863-866

    For break arcs occurring between Ag and Ag/SnO$_2$ 12,wt% electrical contact pairs, the electrical conductivity, viscosity and specific heat at constant pressure are calculated as thermodynamic and transport properties. Mixture rates of contact material vapor are 0%, 1%, 10% and 100%. Influence of the contact material on the properties is investigated. Temperature for the calculation ranges from 2000,K to 20000,K. Following results are shown. When the mixture rate is changed, the electrical conductivity varies at lower temperature (< 10000,K), and the viscosity and specific heat vary widely at all temperature range. The electrical conductivity is independent of the mixture rate when the temperature is exceeding 10000,K. The thermodynamic and transport properties are independent of the kind of the contact materials.

  • Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT)

    Hermann BRAND  Siegfried SELBERHERR  

     
    PAPER-Device Simulation

      Vol:
    E77-C No:2
      Page(s):
    179-186

    An advanced model for self-heating effects in power semiconductor devices is derived from principles of irreversible thermodynamics. The importance of the entropy balance equation is emphasized. The governing equations for the coupled transport of charge carriers and heat are valid in both the stationary and transient regimes. Four characteristic effects contributing to the heat generation can be identified: Joule heating, recombination heating, Thomson heating and carrier source heating. Bandgap narrowing effects are included. Hot carrier effects are neglected. Numerical methods to solve the governing equations for the coupled transport of charge carriers and heat are described. Finally, results obtained in simulating latch-up in an IGT are discussed.