Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT)

Hermann BRAND; Siegfried SELBERHERR

Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT)

Hermann BRAND, Siegfried SELBERHERR

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An advanced model for self-heating effects in power semiconductor devices is derived from principles of irreversible thermodynamics. The importance of the entropy balance equation is emphasized. The governing equations for the coupled transport of charge carriers and heat are valid in both the stationary and transient regimes. Four characteristic effects contributing to the heat generation can be identified: Joule heating, recombination heating, Thomson heating and carrier source heating. Bandgap narrowing effects are included. Hot carrier effects are neglected. Numerical methods to solve the governing equations for the coupled transport of charge carriers and heat are described. Finally, results obtained in simulating latch-up in an IGT are discussed.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.2 pp.179-186

Publication Date: 1994/02/25

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Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))

Category: Device Simulation

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Hermann BRAND, Siegfried SELBERHERR, "Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT)" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 2, pp. 179-186, February 1994, doi: .
Abstract: An advanced model for self-heating effects in power semiconductor devices is derived from principles of irreversible thermodynamics. The importance of the entropy balance equation is emphasized. The governing equations for the coupled transport of charge carriers and heat are valid in both the stationary and transient regimes. Four characteristic effects contributing to the heat generation can be identified: Joule heating, recombination heating, Thomson heating and carrier source heating. Bandgap narrowing effects are included. Hot carrier effects are neglected. Numerical methods to solve the governing equations for the coupled transport of charge carriers and heat are described. Finally, results obtained in simulating latch-up in an IGT are discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_2_179/_p

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@ARTICLE{e77-c_2_179,
author={Hermann BRAND, Siegfried SELBERHERR, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT)},
year={1994},
volume={E77-C},
number={2},
pages={179-186},
abstract={An advanced model for self-heating effects in power semiconductor devices is derived from principles of irreversible thermodynamics. The importance of the entropy balance equation is emphasized. The governing equations for the coupled transport of charge carriers and heat are valid in both the stationary and transient regimes. Four characteristic effects contributing to the heat generation can be identified: Joule heating, recombination heating, Thomson heating and carrier source heating. Bandgap narrowing effects are included. Hot carrier effects are neglected. Numerical methods to solve the governing equations for the coupled transport of charge carriers and heat are described. Finally, results obtained in simulating latch-up in an IGT are discussed.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT)
T2 - IEICE TRANSACTIONS on Electronics
SP - 179
EP - 186
AU - Hermann BRAND
AU - Siegfried SELBERHERR
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1994
AB - An advanced model for self-heating effects in power semiconductor devices is derived from principles of irreversible thermodynamics. The importance of the entropy balance equation is emphasized. The governing equations for the coupled transport of charge carriers and heat are valid in both the stationary and transient regimes. Four characteristic effects contributing to the heat generation can be identified: Joule heating, recombination heating, Thomson heating and carrier source heating. Bandgap narrowing effects are included. Hot carrier effects are neglected. Numerical methods to solve the governing equations for the coupled transport of charge carriers and heat are described. Finally, results obtained in simulating latch-up in an IGT are discussed.
ER -