1-1hit |
Kazuhiko KAI Shigeki KURODA Kenji NISHI
A two-dimensional self-aligned silicide (SALICIDE) model has been developed using the general-purpose process simulator OPUS. A new two-dimensional growth model is proposed. Utilizing a newly-difined effective silicide thickness, the model accounts both silicon-diffusion and metal-diffusion limited silicide growth. Silicide lateral-growth along a sidewall spacer is successfully simulated for Si-diffusion limited silicide growth. Complete MOSFET process simulation with a SALICIDE process is demonstrated for the first time.