Two-Dimensional Modeling of Self-Aligned Silicide Processes with the General-Purpose Process Simulator OPUS
Summary :
A two-dimensional self-aligned silicide (SALICIDE) model has been developed using the general-purpose process simulator OPUS. A new two-dimensional growth model is proposed. Utilizing a newly-difined effective silicide thickness, the model accounts both silicon-diffusion and metal-diffusion limited silicide growth. Silicide lateral-growth along a sidewall spacer is successfully simulated for Si-diffusion limited silicide growth. Complete MOSFET process simulation with a SALICIDE process is demonstrated for the first time.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.2 pp.129-133
- Publication Date
- 1994/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
- Category
- Process Simulation
Authors
Keyword
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Kazuhiko KAI, Shigeki KURODA, Kenji NISHI, "Two-Dimensional Modeling of Self-Aligned Silicide Processes with the General-Purpose Process Simulator OPUS" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 2, pp. 129-133, February 1994, doi: .
Abstract: A two-dimensional self-aligned silicide (SALICIDE) model has been developed using the general-purpose process simulator OPUS. A new two-dimensional growth model is proposed. Utilizing a newly-difined effective silicide thickness, the model accounts both silicon-diffusion and metal-diffusion limited silicide growth. Silicide lateral-growth along a sidewall spacer is successfully simulated for Si-diffusion limited silicide growth. Complete MOSFET process simulation with a SALICIDE process is demonstrated for the first time.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_2_129/_p
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@ARTICLE{e77-c_2_129,
author={Kazuhiko KAI, Shigeki KURODA, Kenji NISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Two-Dimensional Modeling of Self-Aligned Silicide Processes with the General-Purpose Process Simulator OPUS},
year={1994},
volume={E77-C},
number={2},
pages={129-133},
abstract={A two-dimensional self-aligned silicide (SALICIDE) model has been developed using the general-purpose process simulator OPUS. A new two-dimensional growth model is proposed. Utilizing a newly-difined effective silicide thickness, the model accounts both silicon-diffusion and metal-diffusion limited silicide growth. Silicide lateral-growth along a sidewall spacer is successfully simulated for Si-diffusion limited silicide growth. Complete MOSFET process simulation with a SALICIDE process is demonstrated for the first time.},
keywords={},
doi={},
ISSN={},
month={February},}
Copy
TY - JOUR
TI - Two-Dimensional Modeling of Self-Aligned Silicide Processes with the General-Purpose Process Simulator OPUS
T2 - IEICE TRANSACTIONS on Electronics
SP - 129
EP - 133
AU - Kazuhiko KAI
AU - Shigeki KURODA
AU - Kenji NISHI
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1994
AB - A two-dimensional self-aligned silicide (SALICIDE) model has been developed using the general-purpose process simulator OPUS. A new two-dimensional growth model is proposed. Utilizing a newly-difined effective silicide thickness, the model accounts both silicon-diffusion and metal-diffusion limited silicide growth. Silicide lateral-growth along a sidewall spacer is successfully simulated for Si-diffusion limited silicide growth. Complete MOSFET process simulation with a SALICIDE process is demonstrated for the first time.
ER -
English
