A new CMOS analogue transconductor is proposed and simulated. This transconductor is based on the operation of MOS transistors in the linear region and has a good linearity. The simulation result shows that less than 1% distortion can be obtained for the differential input signal of 6.4 Vp-p with IB=80µA and supply voltage of 5V.

This paper describes design considerations for high frequency active BPFs up to 100 MHz. The major design issues for high frequency active filters are the excess phase shift in the integrators and high power consumption of the integrators. Typical bipolar transistor based transconductors such as the Gilbert gain cell and the linearized transconductor with two asymmetric emitter-coupled pairs have been analyzed and compared. It has been clarified that the power consumption of the linearized transconductor can be much smaller than that of the Gilbert gain cell because of its high transconductance to working current ratio while maintaining a signal to noise ratio of the same order. A simple high-speed fully differential linearized transconductor cell is proposed with emitter follower buffers and resistive loads for excess phase compensation. A novel gyrator based transformation for the LC ladder BPF has been introduced. This transformation has resulted in a structure with simple capacitor-coupled active resonators which exactly preserves the original transfer function. A fourth order 10.7 MHz BPF IC was designed using the proposed transconductors. It was fabricated and has demonstrated the usefulness of the proposed approach. In addition, an experimental 100 MHz second order BPF IC with Q=14 has been successfully implemented indicating the potential of the proposed approach.