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Naoki KISHI Toshiki SUGAI Hisanori SHINOHARA
The synthesis of single- and double-wall carbon nanotubes by gas flow-modified, catalyst-supported chemical vapor deposition (CCVD) is reported. We have investigated the gas flow condition dependence on the synthesis of carbon nanotubes (CNTs) by placing blocks in the CCVD reactor. Carbon nanotubes having large diameters are preferentially grown under turbulent flow conditions. This indicates that the diameter distribution of CNTs can be controlled by modification of the gas flow condition in the CCVD.
We compare interfaces of Nb/AlOx-Al/Nb and Nb/ZrOx-Zr/Nb junctions using secondary ion mass spectroscopy and cross-sectional transmission electron microscopy. We have clarified that an interface of the Nb/AlOx-Al/Nb junction is drastically different from that of the Nb/ZrOxZr/Nb junction. An adsorbed water vapor layer plays an important role in suppressing grain boundary diffusion between Nb and Al at the interface of the Nb/AlOxAl/Nb junction. In depositing Nb and Al at low power and cooling the substrate, it is important to control the formation of the adsorbed water vapor layer for fabricating Nb/AlOx-Al/Nb junctions exhibiting excellent current-voltage characteristics.