We compare interfaces of Nb/AlOx-Al/Nb and Nb/ZrOx-Zr/Nb junctions using secondary ion mass spectroscopy and cross-sectional transmission electron microscopy. We have clarified that an interface of the Nb/AlOx-Al/Nb junction is drastically different from that of the Nb/ZrOxZr/Nb junction. An adsorbed water vapor layer plays an important role in suppressing grain boundary diffusion between Nb and Al at the interface of the Nb/AlOxAl/Nb junction. In depositing Nb and Al at low power and cooling the substrate, it is important to control the formation of the adsorbed water vapor layer for fabricating Nb/AlOx-Al/Nb junctions exhibiting excellent current-voltage characteristics.
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Shin'ichi MOROHASHI, "Interfacial Study of Nb Josephson Junctions with Overlayer Structure" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 8, pp. 1150-1156, August 1994, doi: .
Abstract: We compare interfaces of Nb/AlOx-Al/Nb and Nb/ZrOx-Zr/Nb junctions using secondary ion mass spectroscopy and cross-sectional transmission electron microscopy. We have clarified that an interface of the Nb/AlOx-Al/Nb junction is drastically different from that of the Nb/ZrOxZr/Nb junction. An adsorbed water vapor layer plays an important role in suppressing grain boundary diffusion between Nb and Al at the interface of the Nb/AlOxAl/Nb junction. In depositing Nb and Al at low power and cooling the substrate, it is important to control the formation of the adsorbed water vapor layer for fabricating Nb/AlOx-Al/Nb junctions exhibiting excellent current-voltage characteristics.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_8_1150/_p
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@ARTICLE{e77-c_8_1150,
author={Shin'ichi MOROHASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Interfacial Study of Nb Josephson Junctions with Overlayer Structure},
year={1994},
volume={E77-C},
number={8},
pages={1150-1156},
abstract={We compare interfaces of Nb/AlOx-Al/Nb and Nb/ZrOx-Zr/Nb junctions using secondary ion mass spectroscopy and cross-sectional transmission electron microscopy. We have clarified that an interface of the Nb/AlOx-Al/Nb junction is drastically different from that of the Nb/ZrOxZr/Nb junction. An adsorbed water vapor layer plays an important role in suppressing grain boundary diffusion between Nb and Al at the interface of the Nb/AlOxAl/Nb junction. In depositing Nb and Al at low power and cooling the substrate, it is important to control the formation of the adsorbed water vapor layer for fabricating Nb/AlOx-Al/Nb junctions exhibiting excellent current-voltage characteristics.},
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - Interfacial Study of Nb Josephson Junctions with Overlayer Structure
T2 - IEICE TRANSACTIONS on Electronics
SP - 1150
EP - 1156
AU - Shin'ichi MOROHASHI
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1994
AB - We compare interfaces of Nb/AlOx-Al/Nb and Nb/ZrOx-Zr/Nb junctions using secondary ion mass spectroscopy and cross-sectional transmission electron microscopy. We have clarified that an interface of the Nb/AlOx-Al/Nb junction is drastically different from that of the Nb/ZrOxZr/Nb junction. An adsorbed water vapor layer plays an important role in suppressing grain boundary diffusion between Nb and Al at the interface of the Nb/AlOxAl/Nb junction. In depositing Nb and Al at low power and cooling the substrate, it is important to control the formation of the adsorbed water vapor layer for fabricating Nb/AlOx-Al/Nb junctions exhibiting excellent current-voltage characteristics.
ER -