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Kiyoshi ISHII Yoshifumi SAITOU Kengo FURUTANI Hiroshi SAKUMA Yoshito IKEDA
Tin-doped indium oxide (ITO) thin films were prepared on a polyethylene terephthalate (PET) foil by bias sputtering. In the absence of a substrate bias, films having a high resistivity of 210-2 Ωcm were formed. On the other hand, by the application of an rf substrate bias, films having a low resistivity of 2.610-4 Ωcm were formed. The energy of ions that bombarded the substrate during bias sputtering was estimated by a simulation of the ion acceleration. The optimum ion-energy required for the reduction of resistivity was found to be approximately 50 eV.