Estimation of Optimum Ion Energy for the Reduction of Resistivity in Bias Sputtering of ITO Thin Films

Kiyoshi ISHII; Yoshifumi SAITOU; Kengo FURUTANI; Hiroshi SAKUMA; Yoshito IKEDA

doi:10.1093/ietele/e91-c.10.1653

Estimation of Optimum Ion Energy for the Reduction of Resistivity in Bias Sputtering of ITO Thin Films

Kiyoshi ISHII, Yoshifumi SAITOU, Kengo FURUTANI, Hiroshi SAKUMA, Yoshito IKEDA

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Tin-doped indium oxide (ITO) thin films were prepared on a polyethylene terephthalate (PET) foil by bias sputtering. In the absence of a substrate bias, films having a high resistivity of 210^-2 Ωcm were formed. On the other hand, by the application of an rf substrate bias, films having a low resistivity of 2.610^-4 Ωcm were formed. The energy of ions that bombarded the substrate during bias sputtering was estimated by a simulation of the ion acceleration. The optimum ion-energy required for the reduction of resistivity was found to be approximately 50 eV.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.10 pp.1653-1657

Publication Date: 2008/10/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.10.1653

Type of Manuscript: Special Section PAPER (Special Section on Functional Thin Films for Optical Applications)

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Kiyoshi ISHII, Yoshifumi SAITOU, Kengo FURUTANI, Hiroshi SAKUMA, Yoshito IKEDA, "Estimation of Optimum Ion Energy for the Reduction of Resistivity in Bias Sputtering of ITO Thin Films" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 10, pp. 1653-1657, October 2008, doi: 10.1093/ietele/e91-c.10.1653.
Abstract: Tin-doped indium oxide (ITO) thin films were prepared on a polyethylene terephthalate (PET) foil by bias sputtering. In the absence of a substrate bias, films having a high resistivity of 210^-2 Ωcm were formed. On the other hand, by the application of an rf substrate bias, films having a low resistivity of 2.610^-4 Ωcm were formed. The energy of ions that bombarded the substrate during bias sputtering was estimated by a simulation of the ion acceleration. The optimum ion-energy required for the reduction of resistivity was found to be approximately 50 eV.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.10.1653/_p

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@ARTICLE{e91-c_10_1653,
author={Kiyoshi ISHII, Yoshifumi SAITOU, Kengo FURUTANI, Hiroshi SAKUMA, Yoshito IKEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Estimation of Optimum Ion Energy for the Reduction of Resistivity in Bias Sputtering of ITO Thin Films},
year={2008},
volume={E91-C},
number={10},
pages={1653-1657},
abstract={Tin-doped indium oxide (ITO) thin films were prepared on a polyethylene terephthalate (PET) foil by bias sputtering. In the absence of a substrate bias, films having a high resistivity of 210^-2 Ωcm were formed. On the other hand, by the application of an rf substrate bias, films having a low resistivity of 2.610^-4 Ωcm were formed. The energy of ions that bombarded the substrate during bias sputtering was estimated by a simulation of the ion acceleration. The optimum ion-energy required for the reduction of resistivity was found to be approximately 50 eV.},
keywords={},
doi={10.1093/ietele/e91-c.10.1653},
ISSN={1745-1353},
month={October},}

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TY - JOUR
TI - Estimation of Optimum Ion Energy for the Reduction of Resistivity in Bias Sputtering of ITO Thin Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 1653
EP - 1657
AU - Kiyoshi ISHII
AU - Yoshifumi SAITOU
AU - Kengo FURUTANI
AU - Hiroshi SAKUMA
AU - Yoshito IKEDA
PY - 2008
DO - 10.1093/ietele/e91-c.10.1653
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2008
AB - Tin-doped indium oxide (ITO) thin films were prepared on a polyethylene terephthalate (PET) foil by bias sputtering. In the absence of a substrate bias, films having a high resistivity of 210^-2 Ωcm were formed. On the other hand, by the application of an rf substrate bias, films having a low resistivity of 2.610^-4 Ωcm were formed. The energy of ions that bombarded the substrate during bias sputtering was estimated by a simulation of the ion acceleration. The optimum ion-energy required for the reduction of resistivity was found to be approximately 50 eV.
ER -