In two-dimensional simulation of thin-base RHET, we combined three different simulation methods--the Schrödinger equation, the Monte Carlo simulation, and two-dimensional device simulation within a drift and diffusion model. We found that, in the thin-base RHET, the potential distribution differs from that expected from the thick-base RHET. In the thin-base RHET, the potential of the intrinsic base region does not equal that of the base electrode because the intrinsic base region is depleted and the negative emitter voltage (VEB0) raises the potential of both the intrinsic base and the nondoped region under the intrinsic base. There are also modified by the collector voltage. We also show emitter current-voltage characteristics, transfer ratio, and transit time calculated using this method and compare them with results for the one-dimensional case.