Two-Dimensional Monte Carlo Simulation of Resonant-Tunneling Hot Electron Transistors (RHETs)
Summary :
In two-dimensional simulation of thin-base RHET, we combined three different simulation methods--the Schrödinger equation, the Monte Carlo simulation, and two-dimensional device simulation within a drift and diffusion model. We found that, in the thin-base RHET, the potential distribution differs from that expected from the thick-base RHET. In the thin-base RHET, the potential of the intrinsic base region does not equal that of the base electrode because the intrinsic base region is depleted and the negative emitter voltage (VEB
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.2 pp.200-206
- Publication Date
- 1992/02/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
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Hiroaki OHNISHI, "Two-Dimensional Monte Carlo Simulation of Resonant-Tunneling Hot Electron Transistors (RHETs)" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 2, pp. 200-206, February 1992, doi: .
Abstract: In two-dimensional simulation of thin-base RHET, we combined three different simulation methods--the Schrödinger equation, the Monte Carlo simulation, and two-dimensional device simulation within a drift and diffusion model. We found that, in the thin-base RHET, the potential distribution differs from that expected from the thick-base RHET. In the thin-base RHET, the potential of the intrinsic base region does not equal that of the base electrode because the intrinsic base region is depleted and the negative emitter voltage (VEB
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_2_200/_p
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@ARTICLE{e75-c_2_200,
author={Hiroaki OHNISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Two-Dimensional Monte Carlo Simulation of Resonant-Tunneling Hot Electron Transistors (RHETs)},
year={1992},
volume={E75-C},
number={2},
pages={200-206},
abstract={In two-dimensional simulation of thin-base RHET, we combined three different simulation methods--the Schrödinger equation, the Monte Carlo simulation, and two-dimensional device simulation within a drift and diffusion model. We found that, in the thin-base RHET, the potential distribution differs from that expected from the thick-base RHET. In the thin-base RHET, the potential of the intrinsic base region does not equal that of the base electrode because the intrinsic base region is depleted and the negative emitter voltage (VEB
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Two-Dimensional Monte Carlo Simulation of Resonant-Tunneling Hot Electron Transistors (RHETs)
T2 - IEICE TRANSACTIONS on Electronics
SP - 200
EP - 206
AU - Hiroaki OHNISHI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1992
AB - In two-dimensional simulation of thin-base RHET, we combined three different simulation methods--the Schrödinger equation, the Monte Carlo simulation, and two-dimensional device simulation within a drift and diffusion model. We found that, in the thin-base RHET, the potential distribution differs from that expected from the thick-base RHET. In the thin-base RHET, the potential of the intrinsic base region does not equal that of the base electrode because the intrinsic base region is depleted and the negative emitter voltage (VEB
ER -
English
