Frequency-Domain EMI Simulation of Power Electronic Converter with Voltage-Source and Current-Source Noise Models

Keita TAKAHASHI; Takaaki IBUCHI; Tsuyoshi FUNAKI

doi:10.1587/transcom.2018EBP3301

Frequency-Domain EMI Simulation of Power Electronic Converter with Voltage-Source and Current-Source Noise Models

Keita TAKAHASHI, Takaaki IBUCHI, Tsuyoshi FUNAKI

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The electromagnetic interference (EMI) generated by power electronic converters is largely influenced by parasitic inductances and capacitances of the converter. One of the most popular EMI simulation methods that can take account of the parasitic parameters is the three-dimensional electromagnetic simulation by finite element method (FEM). A noise-source model should be given in the frequency domain in comprehensive FEM simulations. However, the internal impedance of the noise source is static in the frequency domain, whereas the transient switching of a power semiconductor changes its internal resistance in the time domain. In this paper, we propose the use of a voltage-source noise model and a current-source noise model to simulate EMI noise with the two components of voltage-dependent noise and current-dependent noise in the frequency domain. In order to simulate voltage-dependent EMI noise, we model the power semiconductor that is turning on by a voltage source, whose internal impedance is low. The voltage-source noise is proportional to the amplitude of the voltage. In order to simulate current-dependent EMI noise, we model the power semiconductor that is turning off by a current source, whose internal impedance is large. The current-source noise is proportional to the amplitude of the current. The measured and simulated conducted EMI agreed very well.

Publication: IEICE TRANSACTIONS on Communications Vol.E102-B No.9 pp.1853-1861

Publication Date: 2019/09/01

Publicized: 2019/03/14

Online ISSN: 1745-1345

DOI: 10.1587/transcom.2018EBP3301

Type of Manuscript: PAPER

Category: Energy in Electronics Communications

Authors

Keita TAKAHASHI
  Mitsubishi Electric Corporation
Takaaki IBUCHI
  Osaka University
Tsuyoshi FUNAKI
  Osaka University

Keyword

power electronic converter, EMI simulation, finite element method

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Keita TAKAHASHI, Takaaki IBUCHI, Tsuyoshi FUNAKI, "Frequency-Domain EMI Simulation of Power Electronic Converter with Voltage-Source and Current-Source Noise Models" in IEICE TRANSACTIONS on Communications, vol. E102-B, no. 9, pp. 1853-1861, September 2019, doi: 10.1587/transcom.2018EBP3301.
Abstract: The electromagnetic interference (EMI) generated by power electronic converters is largely influenced by parasitic inductances and capacitances of the converter. One of the most popular EMI simulation methods that can take account of the parasitic parameters is the three-dimensional electromagnetic simulation by finite element method (FEM). A noise-source model should be given in the frequency domain in comprehensive FEM simulations. However, the internal impedance of the noise source is static in the frequency domain, whereas the transient switching of a power semiconductor changes its internal resistance in the time domain. In this paper, we propose the use of a voltage-source noise model and a current-source noise model to simulate EMI noise with the two components of voltage-dependent noise and current-dependent noise in the frequency domain. In order to simulate voltage-dependent EMI noise, we model the power semiconductor that is turning on by a voltage source, whose internal impedance is low. The voltage-source noise is proportional to the amplitude of the voltage. In order to simulate current-dependent EMI noise, we model the power semiconductor that is turning off by a current source, whose internal impedance is large. The current-source noise is proportional to the amplitude of the current. The measured and simulated conducted EMI agreed very well.
URL: https://global.ieice.org/en_transactions/communications/10.1587/transcom.2018EBP3301/_p

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@ARTICLE{e102-b_9_1853,
author={Keita TAKAHASHI, Takaaki IBUCHI, Tsuyoshi FUNAKI, },
journal={IEICE TRANSACTIONS on Communications},
title={Frequency-Domain EMI Simulation of Power Electronic Converter with Voltage-Source and Current-Source Noise Models},
year={2019},
volume={E102-B},
number={9},
pages={1853-1861},
abstract={The electromagnetic interference (EMI) generated by power electronic converters is largely influenced by parasitic inductances and capacitances of the converter. One of the most popular EMI simulation methods that can take account of the parasitic parameters is the three-dimensional electromagnetic simulation by finite element method (FEM). A noise-source model should be given in the frequency domain in comprehensive FEM simulations. However, the internal impedance of the noise source is static in the frequency domain, whereas the transient switching of a power semiconductor changes its internal resistance in the time domain. In this paper, we propose the use of a voltage-source noise model and a current-source noise model to simulate EMI noise with the two components of voltage-dependent noise and current-dependent noise in the frequency domain. In order to simulate voltage-dependent EMI noise, we model the power semiconductor that is turning on by a voltage source, whose internal impedance is low. The voltage-source noise is proportional to the amplitude of the voltage. In order to simulate current-dependent EMI noise, we model the power semiconductor that is turning off by a current source, whose internal impedance is large. The current-source noise is proportional to the amplitude of the current. The measured and simulated conducted EMI agreed very well.},
keywords={},
doi={10.1587/transcom.2018EBP3301},
ISSN={1745-1345},
month={September},}

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TY - JOUR
TI - Frequency-Domain EMI Simulation of Power Electronic Converter with Voltage-Source and Current-Source Noise Models
T2 - IEICE TRANSACTIONS on Communications
SP - 1853
EP - 1861
AU - Keita TAKAHASHI
AU - Takaaki IBUCHI
AU - Tsuyoshi FUNAKI
PY - 2019
DO - 10.1587/transcom.2018EBP3301
JO - IEICE TRANSACTIONS on Communications
SN - 1745-1345
VL - E102-B
IS - 9
JA - IEICE TRANSACTIONS on Communications
Y1 - September 2019
AB - The electromagnetic interference (EMI) generated by power electronic converters is largely influenced by parasitic inductances and capacitances of the converter. One of the most popular EMI simulation methods that can take account of the parasitic parameters is the three-dimensional electromagnetic simulation by finite element method (FEM). A noise-source model should be given in the frequency domain in comprehensive FEM simulations. However, the internal impedance of the noise source is static in the frequency domain, whereas the transient switching of a power semiconductor changes its internal resistance in the time domain. In this paper, we propose the use of a voltage-source noise model and a current-source noise model to simulate EMI noise with the two components of voltage-dependent noise and current-dependent noise in the frequency domain. In order to simulate voltage-dependent EMI noise, we model the power semiconductor that is turning on by a voltage source, whose internal impedance is low. The voltage-source noise is proportional to the amplitude of the voltage. In order to simulate current-dependent EMI noise, we model the power semiconductor that is turning off by a current source, whose internal impedance is large. The current-source noise is proportional to the amplitude of the current. The measured and simulated conducted EMI agreed very well.
ER -