Synchronization has gained attention in science recently. In electrical engineering, a power network requires generators and loads to be in synchronization. The increase in distributed dc power sources without sophisticated controls has made synchronization more difficult. This paper proposes a synchronous inverter designed for linking distributed power sources within a power network. The linkage inverters should have high confidential characteristics to keep the network stable. The frequency and phase synchronization between synchronous generators in power network has been acheived through power transmission systems. The synchronous inverters contribute in the development of the sophisticated power networks by providing distributed power sources that maintain synchronous operation.

SiC-MOSFETs are being increasingly implemented in power electronics systems as low-loss, fast switching devices. Despite the advantages of an SiC-MOSFET, its large dv/dt or di/dt has fear of electromagnetic interference (EMI) noise. This paper proposes and demonstrates a simple and robust gate driver that can suppress ringing oscillation and surge voltage induced by the turn-off of the SiC-MOSFET body diode. The proposed gate driver utilizes the channel leakage current methodology (CLC) to enhance the damping effect by elevating the gate-source voltage (VGS) and inducing the channel leakage current in the device. The gate driver can self-adjust the timing of initiating CLC operation, which avoids an increase in switching loss. Additionally, the output voltage of the VGS elevation circuit does not need to be actively controlled in accordance with the operating conditions. Thus, the circuit topology is simple, and ringing oscillation can be easily attenuated with fixed circuit parameters regardless of operating conditions, minimizing the increase in switching loss. The effectiveness and versatility of proposed gate driver were experimentally validated for a wide range of operating conditions by double and single pulse switching tests.

The electromagnetic interference (EMI) generated by power electronic converters is largely influenced by parasitic inductances and capacitances of the converter. One of the most popular EMI simulation methods that can take account of the parasitic parameters is the three-dimensional electromagnetic simulation by finite element method (FEM). A noise-source model should be given in the frequency domain in comprehensive FEM simulations. However, the internal impedance of the noise source is static in the frequency domain, whereas the transient switching of a power semiconductor changes its internal resistance in the time domain. In this paper, we propose the use of a voltage-source noise model and a current-source noise model to simulate EMI noise with the two components of voltage-dependent noise and current-dependent noise in the frequency domain. In order to simulate voltage-dependent EMI noise, we model the power semiconductor that is turning on by a voltage source, whose internal impedance is low. The voltage-source noise is proportional to the amplitude of the voltage. In order to simulate current-dependent EMI noise, we model the power semiconductor that is turning off by a current source, whose internal impedance is large. The current-source noise is proportional to the amplitude of the current. The measured and simulated conducted EMI agreed very well.