IEICE TRANSACTIONS on Electronics
Noise Suppression in SiC-MOSFET Body Diode Turn-Off Operation with Simple and Robust Gate Driver
Summary :
SiC-MOSFETs are being increasingly implemented in power electronics systems as low-loss, fast switching devices. Despite the advantages of an SiC-MOSFET, its large dv/dt or di/dt has fear of electromagnetic interference (EMI) noise. This paper proposes and demonstrates a simple and robust gate driver that can suppress ringing oscillation and surge voltage induced by the turn-off of the SiC-MOSFET body diode. The proposed gate driver utilizes the channel leakage current methodology (CLC) to enhance the damping effect by elevating the gate-source voltage (VGS) and inducing the channel leakage current in the device. The gate driver can self-adjust the timing of initiating CLC operation, which avoids an increase in switching loss. Additionally, the output voltage of the VGS elevation circuit does not need to be actively controlled in accordance with the operating conditions. Thus, the circuit topology is simple, and ringing oscillation can be easily attenuated with fixed circuit parameters regardless of operating conditions, minimizing the increase in switching loss. The effectiveness and versatility of proposed gate driver were experimentally validated for a wide range of operating conditions by double and single pulse switching tests.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E105-C No.12 pp.750-760
- Publication Date
- 2022/12/01
- Publicized
- 2022/06/14
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2021ECP5030
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Hiroshi SUZUKI
Hitachi, Ltd.
Tsuyoshi FUNAKI
Osaka University
Keyword
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Hiroshi SUZUKI, Tsuyoshi FUNAKI, "Noise Suppression in SiC-MOSFET Body Diode Turn-Off Operation with Simple and Robust Gate Driver" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 12, pp. 750-760, December 2022, doi: 10.1587/transele.2021ECP5030.
Abstract: SiC-MOSFETs are being increasingly implemented in power electronics systems as low-loss, fast switching devices. Despite the advantages of an SiC-MOSFET, its large dv/dt or di/dt has fear of electromagnetic interference (EMI) noise. This paper proposes and demonstrates a simple and robust gate driver that can suppress ringing oscillation and surge voltage induced by the turn-off of the SiC-MOSFET body diode. The proposed gate driver utilizes the channel leakage current methodology (CLC) to enhance the damping effect by elevating the gate-source voltage (VGS) and inducing the channel leakage current in the device. The gate driver can self-adjust the timing of initiating CLC operation, which avoids an increase in switching loss. Additionally, the output voltage of the VGS elevation circuit does not need to be actively controlled in accordance with the operating conditions. Thus, the circuit topology is simple, and ringing oscillation can be easily attenuated with fixed circuit parameters regardless of operating conditions, minimizing the increase in switching loss. The effectiveness and versatility of proposed gate driver were experimentally validated for a wide range of operating conditions by double and single pulse switching tests.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021ECP5030/_p
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@ARTICLE{e105-c_12_750,
author={Hiroshi SUZUKI, Tsuyoshi FUNAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Noise Suppression in SiC-MOSFET Body Diode Turn-Off Operation with Simple and Robust Gate Driver},
year={2022},
volume={E105-C},
number={12},
pages={750-760},
abstract={SiC-MOSFETs are being increasingly implemented in power electronics systems as low-loss, fast switching devices. Despite the advantages of an SiC-MOSFET, its large dv/dt or di/dt has fear of electromagnetic interference (EMI) noise. This paper proposes and demonstrates a simple and robust gate driver that can suppress ringing oscillation and surge voltage induced by the turn-off of the SiC-MOSFET body diode. The proposed gate driver utilizes the channel leakage current methodology (CLC) to enhance the damping effect by elevating the gate-source voltage (VGS) and inducing the channel leakage current in the device. The gate driver can self-adjust the timing of initiating CLC operation, which avoids an increase in switching loss. Additionally, the output voltage of the VGS elevation circuit does not need to be actively controlled in accordance with the operating conditions. Thus, the circuit topology is simple, and ringing oscillation can be easily attenuated with fixed circuit parameters regardless of operating conditions, minimizing the increase in switching loss. The effectiveness and versatility of proposed gate driver were experimentally validated for a wide range of operating conditions by double and single pulse switching tests.},
keywords={},
doi={10.1587/transele.2021ECP5030},
ISSN={1745-1353},
month={December},}
Copy
TY - JOUR
TI - Noise Suppression in SiC-MOSFET Body Diode Turn-Off Operation with Simple and Robust Gate Driver
T2 - IEICE TRANSACTIONS on Electronics
SP - 750
EP - 760
AU - Hiroshi SUZUKI
AU - Tsuyoshi FUNAKI
PY - 2022
DO - 10.1587/transele.2021ECP5030
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2022
AB - SiC-MOSFETs are being increasingly implemented in power electronics systems as low-loss, fast switching devices. Despite the advantages of an SiC-MOSFET, its large dv/dt or di/dt has fear of electromagnetic interference (EMI) noise. This paper proposes and demonstrates a simple and robust gate driver that can suppress ringing oscillation and surge voltage induced by the turn-off of the SiC-MOSFET body diode. The proposed gate driver utilizes the channel leakage current methodology (CLC) to enhance the damping effect by elevating the gate-source voltage (VGS) and inducing the channel leakage current in the device. The gate driver can self-adjust the timing of initiating CLC operation, which avoids an increase in switching loss. Additionally, the output voltage of the VGS elevation circuit does not need to be actively controlled in accordance with the operating conditions. Thus, the circuit topology is simple, and ringing oscillation can be easily attenuated with fixed circuit parameters regardless of operating conditions, minimizing the increase in switching loss. The effectiveness and versatility of proposed gate driver were experimentally validated for a wide range of operating conditions by double and single pulse switching tests.
ER -
English
