SiC-MOSFETs are being increasingly implemented in power electronics systems as low-loss, fast switching devices. Despite the advantages of an SiC-MOSFET, its large dv/dt or di/dt has fear of electromagnetic interference (EMI) noise. This paper proposes and demonstrates a simple and robust gate driver that can suppress ringing oscillation and surge voltage induced by the turn-off of the SiC-MOSFET body diode. The proposed gate driver utilizes the channel leakage current methodology (CLC) to enhance the damping effect by elevating the gate-source voltage (VGS) and inducing the channel leakage current in the device. The gate driver can self-adjust the timing of initiating CLC operation, which avoids an increase in switching loss. Additionally, the output voltage of the VGS elevation circuit does not need to be actively controlled in accordance with the operating conditions. Thus, the circuit topology is simple, and ringing oscillation can be easily attenuated with fixed circuit parameters regardless of operating conditions, minimizing the increase in switching loss. The effectiveness and versatility of proposed gate driver were experimentally validated for a wide range of operating conditions by double and single pulse switching tests.

An active gate driver IC generates arbitrary switching waveform is proposed to reduce the switching loss, the voltage overshoot, and the electromagnetic interference (EMI) by optimizing the switching pattern. However, it is hard to find optimal switching pattern because the switching pattern has huge possible combinations. In this paper, the method to estimate the switching loss and the voltage overshoot from the switching pattern with neural network (NN) is proposed. The implemented NN model obtains reasonable learning results for data-sets.