High-Luminance EL Devices Using Zn2Si1-XGeXO4:Mn Thin Films Prepared by Combinatorial Deposition by r.f. Magnetron Sputtering with Subdivided Powder Targets
Summary :
A new technique incorporating combinatorial deposition to develop thin-film phosphors by r.f. magnetron sputtering is demonstrated using subdivided powder targets. In comparison with development using conventional r.f. magnetron sputtering, the atomic ratios of Si and Ge as well as the Mn content in Zn2Si1-XGeXO4:Mn thin film phosphors could be more efficiently optimized in order to obtain the highest intensity in electroluminescent and photoluminescent emissions. High luminances of 11800 and 1536 cd/m2 were obtained in Zn2Si0.6Ge0.4O4:Mn thin-film electroluminescent devices fabricated under optimized conditions and driven at 1 kHz and 60 Hz, respectively.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E88-C No.11 pp.2065-2069
- Publication Date
- 2005/11/01
- Publicized
- Online ISSN
- DOI
- 10.1093/ietele/e88-c.11.2065
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Electronic Displays)
- Category
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Toshihiro MIYATA, Yu MOCHIZUKI, Tadatsugu MINAMI, "High-Luminance EL Devices Using Zn2Si1-XGeXO4:Mn Thin Films Prepared by Combinatorial Deposition by r.f. Magnetron Sputtering with Subdivided Powder Targets" in IEICE TRANSACTIONS on Electronics,
vol. E88-C, no. 11, pp. 2065-2069, November 2005, doi: 10.1093/ietele/e88-c.11.2065.
Abstract: A new technique incorporating combinatorial deposition to develop thin-film phosphors by r.f. magnetron sputtering is demonstrated using subdivided powder targets. In comparison with development using conventional r.f. magnetron sputtering, the atomic ratios of Si and Ge as well as the Mn content in Zn2Si1-XGeXO4:Mn thin film phosphors could be more efficiently optimized in order to obtain the highest intensity in electroluminescent and photoluminescent emissions. High luminances of 11800 and 1536 cd/m2 were obtained in Zn2Si0.6Ge0.4O4:Mn thin-film electroluminescent devices fabricated under optimized conditions and driven at 1 kHz and 60 Hz, respectively.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.11.2065/_p
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@ARTICLE{e88-c_11_2065,
author={Toshihiro MIYATA, Yu MOCHIZUKI, Tadatsugu MINAMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Luminance EL Devices Using Zn2Si1-XGeXO4:Mn Thin Films Prepared by Combinatorial Deposition by r.f. Magnetron Sputtering with Subdivided Powder Targets},
year={2005},
volume={E88-C},
number={11},
pages={2065-2069},
abstract={A new technique incorporating combinatorial deposition to develop thin-film phosphors by r.f. magnetron sputtering is demonstrated using subdivided powder targets. In comparison with development using conventional r.f. magnetron sputtering, the atomic ratios of Si and Ge as well as the Mn content in Zn2Si1-XGeXO4:Mn thin film phosphors could be more efficiently optimized in order to obtain the highest intensity in electroluminescent and photoluminescent emissions. High luminances of 11800 and 1536 cd/m2 were obtained in Zn2Si0.6Ge0.4O4:Mn thin-film electroluminescent devices fabricated under optimized conditions and driven at 1 kHz and 60 Hz, respectively.},
keywords={},
doi={10.1093/ietele/e88-c.11.2065},
ISSN={},
month={November},}
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TY - JOUR
TI - High-Luminance EL Devices Using Zn2Si1-XGeXO4:Mn Thin Films Prepared by Combinatorial Deposition by r.f. Magnetron Sputtering with Subdivided Powder Targets
T2 - IEICE TRANSACTIONS on Electronics
SP - 2065
EP - 2069
AU - Toshihiro MIYATA
AU - Yu MOCHIZUKI
AU - Tadatsugu MINAMI
PY - 2005
DO - 10.1093/ietele/e88-c.11.2065
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2005
AB - A new technique incorporating combinatorial deposition to develop thin-film phosphors by r.f. magnetron sputtering is demonstrated using subdivided powder targets. In comparison with development using conventional r.f. magnetron sputtering, the atomic ratios of Si and Ge as well as the Mn content in Zn2Si1-XGeXO4:Mn thin film phosphors could be more efficiently optimized in order to obtain the highest intensity in electroluminescent and photoluminescent emissions. High luminances of 11800 and 1536 cd/m2 were obtained in Zn2Si0.6Ge0.4O4:Mn thin-film electroluminescent devices fabricated under optimized conditions and driven at 1 kHz and 60 Hz, respectively.
ER -
English
