A 13.56 MHz CMOS RF Identification Passive Tag LSI with Ferroelectric Random Access Memory

Shoichi MASUI; Toshiyuki TERAMOTO

doi:10.1093/ietele/e88-c.4.601

A 13.56 MHz CMOS RF Identification Passive Tag LSI with Ferroelectric Random Access Memory

Shoichi MASUI, Toshiyuki TERAMOTO

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A radio frequency identification tag LSI operating with the carrier frequency of 13.56 MHz as well as storing nonvolatile information in embedded ferroelectric random access memory (FeRAM) has been developed. A full wave rectifier composed of PMOS transistor diodes and NMOS transistor switches achieves RF-to-DC power conversion efficiency over 54%. The entire 16 kbits write and read transaction time can be reduced to 2.1 sec by the use of FeRAM, which corresponds to 2.2 times speed enhancement over conventional EEPROM based tag LSIs. The communication range of the FeRAM based tag LSI can be effectively improved by storing antitheft information in a ferroelectric nonvolatile flip-flop, which can reduce the power consumption of FeRAM from 27 µW to 5 µW. The communication range for the antitheft gate system becomes 70 cm.

Publication: IEICE TRANSACTIONS on Electronics Vol.E88-C No.4 pp.601-607

Publication Date: 2005/04/01

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DOI: 10.1093/ietele/e88-c.4.601

Type of Manuscript: Special Section INVITED PAPER (Special Section on Low-Power LSI and Low-Power IP)

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Shoichi MASUI, Toshiyuki TERAMOTO, "A 13.56 MHz CMOS RF Identification Passive Tag LSI with Ferroelectric Random Access Memory" in IEICE TRANSACTIONS on Electronics, vol. E88-C, no. 4, pp. 601-607, April 2005, doi: 10.1093/ietele/e88-c.4.601.
Abstract: A radio frequency identification tag LSI operating with the carrier frequency of 13.56 MHz as well as storing nonvolatile information in embedded ferroelectric random access memory (FeRAM) has been developed. A full wave rectifier composed of PMOS transistor diodes and NMOS transistor switches achieves RF-to-DC power conversion efficiency over 54%. The entire 16 kbits write and read transaction time can be reduced to 2.1 sec by the use of FeRAM, which corresponds to 2.2 times speed enhancement over conventional EEPROM based tag LSIs. The communication range of the FeRAM based tag LSI can be effectively improved by storing antitheft information in a ferroelectric nonvolatile flip-flop, which can reduce the power consumption of FeRAM from 27 µW to 5 µW. The communication range for the antitheft gate system becomes 70 cm.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.4.601/_p

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@ARTICLE{e88-c_4_601,
author={Shoichi MASUI, Toshiyuki TERAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 13.56 MHz CMOS RF Identification Passive Tag LSI with Ferroelectric Random Access Memory},
year={2005},
volume={E88-C},
number={4},
pages={601-607},
abstract={A radio frequency identification tag LSI operating with the carrier frequency of 13.56 MHz as well as storing nonvolatile information in embedded ferroelectric random access memory (FeRAM) has been developed. A full wave rectifier composed of PMOS transistor diodes and NMOS transistor switches achieves RF-to-DC power conversion efficiency over 54%. The entire 16 kbits write and read transaction time can be reduced to 2.1 sec by the use of FeRAM, which corresponds to 2.2 times speed enhancement over conventional EEPROM based tag LSIs. The communication range of the FeRAM based tag LSI can be effectively improved by storing antitheft information in a ferroelectric nonvolatile flip-flop, which can reduce the power consumption of FeRAM from 27 µW to 5 µW. The communication range for the antitheft gate system becomes 70 cm.},
keywords={},
doi={10.1093/ietele/e88-c.4.601},
ISSN={},
month={April},}

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TY - JOUR
TI - A 13.56 MHz CMOS RF Identification Passive Tag LSI with Ferroelectric Random Access Memory
T2 - IEICE TRANSACTIONS on Electronics
SP - 601
EP - 607
AU - Shoichi MASUI
AU - Toshiyuki TERAMOTO
PY - 2005
DO - 10.1093/ietele/e88-c.4.601
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2005
AB - A radio frequency identification tag LSI operating with the carrier frequency of 13.56 MHz as well as storing nonvolatile information in embedded ferroelectric random access memory (FeRAM) has been developed. A full wave rectifier composed of PMOS transistor diodes and NMOS transistor switches achieves RF-to-DC power conversion efficiency over 54%. The entire 16 kbits write and read transaction time can be reduced to 2.1 sec by the use of FeRAM, which corresponds to 2.2 times speed enhancement over conventional EEPROM based tag LSIs. The communication range of the FeRAM based tag LSI can be effectively improved by storing antitheft information in a ferroelectric nonvolatile flip-flop, which can reduce the power consumption of FeRAM from 27 µW to 5 µW. The communication range for the antitheft gate system becomes 70 cm.
ER -