Low Phase Noise, InGaP/GaAs HBT VCO MMIC for Millimeter-Wave Applications

Satoshi KURACHI; Toshihiko YOSHIMASU

doi:10.1093/ietele/e88-c.4.678

Low Phase Noise, InGaP/GaAs HBT VCO MMIC for Millimeter-Wave Applications

Satoshi KURACHI, Toshihiko YOSHIMASU

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A fully integrated voltage controlled oscillator (VCO) MMIC for millimeter-wave applications has been designed and implemented in InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve a fully integrated VCO, a base-emitter diode is employed as the tuning varactor, and microstrip lines are employed for the transmission lines. The fabricated VCO MMIC chip size is 0.86 mm 1.34 mm and delivers an output power of 5.1 dBm at 28.7 GHz and a free-running phase noise of -118 dBc/Hz at 1 MHz offset. The dc current consumption is only 20 mA.

Publication: IEICE TRANSACTIONS on Electronics Vol.E88-C No.4 pp.678-682

Publication Date: 2005/04/01

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DOI: 10.1093/ietele/e88-c.4.678

Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)

Category: Compound Semiconductor Devices

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Satoshi KURACHI, Toshihiko YOSHIMASU, "Low Phase Noise, InGaP/GaAs HBT VCO MMIC for Millimeter-Wave Applications" in IEICE TRANSACTIONS on Electronics, vol. E88-C, no. 4, pp. 678-682, April 2005, doi: 10.1093/ietele/e88-c.4.678.
Abstract: A fully integrated voltage controlled oscillator (VCO) MMIC for millimeter-wave applications has been designed and implemented in InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve a fully integrated VCO, a base-emitter diode is employed as the tuning varactor, and microstrip lines are employed for the transmission lines. The fabricated VCO MMIC chip size is 0.86 mm 1.34 mm and delivers an output power of 5.1 dBm at 28.7 GHz and a free-running phase noise of -118 dBc/Hz at 1 MHz offset. The dc current consumption is only 20 mA.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.4.678/_p

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@ARTICLE{e88-c_4_678,
author={Satoshi KURACHI, Toshihiko YOSHIMASU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Phase Noise, InGaP/GaAs HBT VCO MMIC for Millimeter-Wave Applications},
year={2005},
volume={E88-C},
number={4},
pages={678-682},
abstract={A fully integrated voltage controlled oscillator (VCO) MMIC for millimeter-wave applications has been designed and implemented in InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve a fully integrated VCO, a base-emitter diode is employed as the tuning varactor, and microstrip lines are employed for the transmission lines. The fabricated VCO MMIC chip size is 0.86 mm 1.34 mm and delivers an output power of 5.1 dBm at 28.7 GHz and a free-running phase noise of -118 dBc/Hz at 1 MHz offset. The dc current consumption is only 20 mA.},
keywords={},
doi={10.1093/ietele/e88-c.4.678},
ISSN={},
month={April},}

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TY - JOUR
TI - Low Phase Noise, InGaP/GaAs HBT VCO MMIC for Millimeter-Wave Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 678
EP - 682
AU - Satoshi KURACHI
AU - Toshihiko YOSHIMASU
PY - 2005
DO - 10.1093/ietele/e88-c.4.678
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2005
AB - A fully integrated voltage controlled oscillator (VCO) MMIC for millimeter-wave applications has been designed and implemented in InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve a fully integrated VCO, a base-emitter diode is employed as the tuning varactor, and microstrip lines are employed for the transmission lines. The fabricated VCO MMIC chip size is 0.86 mm 1.34 mm and delivers an output power of 5.1 dBm at 28.7 GHz and a free-running phase noise of -118 dBc/Hz at 1 MHz offset. The dc current consumption is only 20 mA.
ER -