Determining GaInP/GaAs HBT Device Structure by DC Measurements on a Two-Emitter HBT Device and High Frequency Transit Time Measurements
Summary :
A method to monitor the GaInP/GaAs HBT device structure including emitter ledge thickness is demonstrated in this paper. The base thickness and base doping density are obtained through base transit time and base sheet resistance measurements while the base transit time is measured through the cut-off frequency measurements at various bias points. A large size two-emitter HBT device is used to measure the ledge thickness. Emitter doping profile and collector doping profile are obtained by the large size HBT device through C-V measurements. An FATFET device formed by two emitters as drain and source terminals and the interconnect metal as the on-ledge Schottky gate between two emitters is used to measure the ledge thickness.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E88-C No.6 pp.1127-1132
- Publication Date
- 2005/06/01
- Publicized
- Online ISSN
- DOI
- 10.1093/ietele/e88-c.6.1127
- Type of Manuscript
- Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
- Category
- Device
Authors
Keyword
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Chinchun MENG, Bo-Chen TSOU, Sheng-Che TSENG, "Determining GaInP/GaAs HBT Device Structure by DC Measurements on a Two-Emitter HBT Device and High Frequency Transit Time Measurements" in IEICE TRANSACTIONS on Electronics,
vol. E88-C, no. 6, pp. 1127-1132, June 2005, doi: 10.1093/ietele/e88-c.6.1127.
Abstract: A method to monitor the GaInP/GaAs HBT device structure including emitter ledge thickness is demonstrated in this paper. The base thickness and base doping density are obtained through base transit time and base sheet resistance measurements while the base transit time is measured through the cut-off frequency measurements at various bias points. A large size two-emitter HBT device is used to measure the ledge thickness. Emitter doping profile and collector doping profile are obtained by the large size HBT device through C-V measurements. An FATFET device formed by two emitters as drain and source terminals and the interconnect metal as the on-ledge Schottky gate between two emitters is used to measure the ledge thickness.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.6.1127/_p
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@ARTICLE{e88-c_6_1127,
author={Chinchun MENG, Bo-Chen TSOU, Sheng-Che TSENG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Determining GaInP/GaAs HBT Device Structure by DC Measurements on a Two-Emitter HBT Device and High Frequency Transit Time Measurements},
year={2005},
volume={E88-C},
number={6},
pages={1127-1132},
abstract={A method to monitor the GaInP/GaAs HBT device structure including emitter ledge thickness is demonstrated in this paper. The base thickness and base doping density are obtained through base transit time and base sheet resistance measurements while the base transit time is measured through the cut-off frequency measurements at various bias points. A large size two-emitter HBT device is used to measure the ledge thickness. Emitter doping profile and collector doping profile are obtained by the large size HBT device through C-V measurements. An FATFET device formed by two emitters as drain and source terminals and the interconnect metal as the on-ledge Schottky gate between two emitters is used to measure the ledge thickness.},
keywords={},
doi={10.1093/ietele/e88-c.6.1127},
ISSN={},
month={June},}
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TY - JOUR
TI - Determining GaInP/GaAs HBT Device Structure by DC Measurements on a Two-Emitter HBT Device and High Frequency Transit Time Measurements
T2 - IEICE TRANSACTIONS on Electronics
SP - 1127
EP - 1132
AU - Chinchun MENG
AU - Bo-Chen TSOU
AU - Sheng-Che TSENG
PY - 2005
DO - 10.1093/ietele/e88-c.6.1127
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2005
AB - A method to monitor the GaInP/GaAs HBT device structure including emitter ledge thickness is demonstrated in this paper. The base thickness and base doping density are obtained through base transit time and base sheet resistance measurements while the base transit time is measured through the cut-off frequency measurements at various bias points. A large size two-emitter HBT device is used to measure the ledge thickness. Emitter doping profile and collector doping profile are obtained by the large size HBT device through C-V measurements. An FATFET device formed by two emitters as drain and source terminals and the interconnect metal as the on-ledge Schottky gate between two emitters is used to measure the ledge thickness.
ER -
English
