IEICE TRANSACTIONS on Electronics
Flexible Organic Field-Effect Transistors Based on the Composites with the Same Thiophene Backbone by Wet Process
Summary :
Organic field-effect transistors (OFETs) based on a composite with the same thiophene backbone were fabricated by spin coating using an annealing solution of poly(3-hexylthiophene) (PAT6) and α, ω-dihexylsexithiophene (DH-6T). The morphology of grains on the non-octadecyltrichlorosilane (OTS) treated and OTS treated gate insulators is granular and tube-like, respectively. The different morphologies of the OFETs with non-OTS treated and OTS-treated gate insulators result in the improvement of field-effect mobility. In the case of poly(ethylene naphthalate) substrate, an OFET with an 89 wt% DH-6T composite corresponding to two molecules of DH-6T per hexylthiophene repeating unit had a carrier mobility of 0.019 cm2/Vs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.12 pp.1779-1780
- Publication Date
- 2006/12/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.12.1779
- Type of Manuscript
- Special Section LETTER (Special Section on Towards the Realization of Organic Molecular Electronics)
- Category
- Organic Molecular Devices
Authors
Keyword
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Hirotake KAJII, Hiroshi OKUYA, Shohei FUKUDA, Akinori SAKAKIBARA, Yutaka OHMORI, "Flexible Organic Field-Effect Transistors Based on the Composites with the Same Thiophene Backbone by Wet Process" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 12, pp. 1779-1780, December 2006, doi: 10.1093/ietele/e89-c.12.1779.
Abstract: Organic field-effect transistors (OFETs) based on a composite with the same thiophene backbone were fabricated by spin coating using an annealing solution of poly(3-hexylthiophene) (PAT6) and α, ω-dihexylsexithiophene (DH-6T). The morphology of grains on the non-octadecyltrichlorosilane (OTS) treated and OTS treated gate insulators is granular and tube-like, respectively. The different morphologies of the OFETs with non-OTS treated and OTS-treated gate insulators result in the improvement of field-effect mobility. In the case of poly(ethylene naphthalate) substrate, an OFET with an 89 wt% DH-6T composite corresponding to two molecules of DH-6T per hexylthiophene repeating unit had a carrier mobility of 0.019 cm2/Vs.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.12.1779/_p
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@ARTICLE{e89-c_12_1779,
author={Hirotake KAJII, Hiroshi OKUYA, Shohei FUKUDA, Akinori SAKAKIBARA, Yutaka OHMORI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Flexible Organic Field-Effect Transistors Based on the Composites with the Same Thiophene Backbone by Wet Process},
year={2006},
volume={E89-C},
number={12},
pages={1779-1780},
abstract={Organic field-effect transistors (OFETs) based on a composite with the same thiophene backbone were fabricated by spin coating using an annealing solution of poly(3-hexylthiophene) (PAT6) and α, ω-dihexylsexithiophene (DH-6T). The morphology of grains on the non-octadecyltrichlorosilane (OTS) treated and OTS treated gate insulators is granular and tube-like, respectively. The different morphologies of the OFETs with non-OTS treated and OTS-treated gate insulators result in the improvement of field-effect mobility. In the case of poly(ethylene naphthalate) substrate, an OFET with an 89 wt% DH-6T composite corresponding to two molecules of DH-6T per hexylthiophene repeating unit had a carrier mobility of 0.019 cm2/Vs.},
keywords={},
doi={10.1093/ietele/e89-c.12.1779},
ISSN={1745-1353},
month={December},}
Copy
TY - JOUR
TI - Flexible Organic Field-Effect Transistors Based on the Composites with the Same Thiophene Backbone by Wet Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 1779
EP - 1780
AU - Hirotake KAJII
AU - Hiroshi OKUYA
AU - Shohei FUKUDA
AU - Akinori SAKAKIBARA
AU - Yutaka OHMORI
PY - 2006
DO - 10.1093/ietele/e89-c.12.1779
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2006
AB - Organic field-effect transistors (OFETs) based on a composite with the same thiophene backbone were fabricated by spin coating using an annealing solution of poly(3-hexylthiophene) (PAT6) and α, ω-dihexylsexithiophene (DH-6T). The morphology of grains on the non-octadecyltrichlorosilane (OTS) treated and OTS treated gate insulators is granular and tube-like, respectively. The different morphologies of the OFETs with non-OTS treated and OTS-treated gate insulators result in the improvement of field-effect mobility. In the case of poly(ethylene naphthalate) substrate, an OFET with an 89 wt% DH-6T composite corresponding to two molecules of DH-6T per hexylthiophene repeating unit had a carrier mobility of 0.019 cm2/Vs.
ER -
English
