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Masayuki CHIKAMATSU Yoshinori HORII Ming LU Yuji YOSHIDA Reiko AZUMI Kiyoshi YASE
We fabricated solution-processed organic complementary inverters based on α,ω-bis(2-hexyldecyl)sexithiophene (BHD6T) for p-channel and C60-fused N-methylpyrrolidine-meta-dodecyl phenyl (C60MC12) for n-channel. The BHD6T and C60MC12 thin-film transistors showed high field-effect mobilities of 0.035 and 0.057 cm2/Vs, respectively. The complementary inverter with a supply voltage of 50 V exhibited inverting voltages of 26.8 V for forward and 27.0 V for backward sweeps and a high gain of 76.
Hirotake KAJII Hiroshi OKUYA Shohei FUKUDA Akinori SAKAKIBARA Yutaka OHMORI
Organic field-effect transistors (OFETs) based on a composite with the same thiophene backbone were fabricated by spin coating using an annealing solution of poly(3-hexylthiophene) (PAT6) and α, ω-dihexylsexithiophene (DH-6T). The morphology of grains on the non-octadecyltrichlorosilane (OTS) treated and OTS treated gate insulators is granular and tube-like, respectively. The different morphologies of the OFETs with non-OTS treated and OTS-treated gate insulators result in the improvement of field-effect mobility. In the case of poly(ethylene naphthalate) substrate, an OFET with an 89 wt% DH-6T composite corresponding to two molecules of DH-6T per hexylthiophene repeating unit had a carrier mobility of 0.019 cm2/Vs.