We have studied the performances of several types of vortex flow transistors including prototype flux flow transistors (FFTs), nanobridge vortex flow transistors (NBVFTs) based on a parallel array of nanobridges, planar Josephson vortex flow transistors (planar JVFTs) based on a parallel array of grain boundary Josephson junctions, and JVFTs with a stacked structure (stacked JVFTs). The NBVFTs had considerably higher magnetic field sensitivity and shorter response time than the FFTs. A flux-to-voltage transfer function V/φ of 2.6 m V/φo and a modulation depth of 0.5 mV were obtained for the NBVFT composed of 2 nanobridges, while the current gain was small. The temperature dependence of the device parameters (the dynamic resistance and the inductance) suggests that the surface barrier to the Abrikosov vortex entry into the nanobridge strongly contributes to the relatively large V/φ values. The response time of the nanobridge is estimated to be 5 ps. On the other hand, the JVFTs showed large current gains because of the small kinetic inductance of the Josephson junction. The planar JVFT composed of 3 Josephson junctions with an asymmetrical geometry showed a current gain of 2.2 at 4.2 K. Also, the stacked JVFT showed the current gain of 2.0, while the maximum value of V/φ was 210 µV/φo. The mutual inductance between the control line and the superconducting loop within the transistor was enhanced in the stacked JVFT. This enhancement may yield a short response time compared to that of the planar JVFT. When we apply these vortex flow transistors, we should take account of the properties peculiar to each transistor.

We deposited thin films of thiophene/phenylene co-oligomers (TPCOs) onto poly(tetrafluoroethylene) (PTFE) layers that were friction-transferred on substrates. These films were composed of aligned molecules in such a way that their polarizations of emissions and absorbances were larger along the drawing direction than those perpendicular to that direction. Organic field-effect transistors (OFETs) fabricated with these films indicated large mobilities, when the drawing direction of PTFE was parallel to the channel length direction. The friction-transfer technique forms the TPCO films that indicate the anisotropic optical and electronic properties.

We fabricated solution-processed organic complementary inverters based on α,ω-bis(2-hexyldecyl)sexithiophene (BHD6T) for p-channel and C60-fused N-methylpyrrolidine-meta-dodecyl phenyl (C60MC12) for n-channel. The BHD6T and C60MC12 thin-film transistors showed high field-effect mobilities of 0.035 and 0.057 cm2/Vs, respectively. The complementary inverter with a supply voltage of 50 V exhibited inverting voltages of 26.8 V for forward and 27.0 V for backward sweeps and a high gain of 76.

We fabricated organic p-n heterojunction, p-i-n heterojunction and all-i-layer photovoltaic cells of a zinc phthalocyanine (ZnPc)/1:1 codeposition (ZnPc:C60)/C60 structure with Al cathode. We investigated the effects of the device structure and the cathode material on the photovoltaic properties. The thickness of the i-layer was changed as 0 nm (= p-n heterojunction), 10 nm (= p-i-n heterojunction) or 50 nm (= all-i-layer) with the total thickness of 50 nm. We also changed cathode materials from Al to low-workfunction Mg:Ag electrode. Photovoltaic properties, i.e., short-circuit current density, fill factor and power conversion efficiency, were strongly influenced by the device structure and cathode material. Finally, the power conversion efficiency showed a maximum (1.5%) with the p-i-n structure and a Mg:Ag cathode under Air Mass 1.5 global solar conditions.