We fabricated organic p-n heterojunction, p-i-n heterojunction and all-i-layer photovoltaic cells of a zinc phthalocyanine (ZnPc)/1:1 codeposition (ZnPc:C60)/C60 structure with Al cathode. We investigated the effects of the device structure and the cathode material on the photovoltaic properties. The thickness of the i-layer was changed as 0 nm (= p-n heterojunction), 10 nm (= p-i-n heterojunction) or 50 nm (= all-i-layer) with the total thickness of 50 nm. We also changed cathode materials from Al to low-workfunction Mg:Ag electrode. Photovoltaic properties, i.e., short-circuit current density, fill factor and power conversion efficiency, were strongly influenced by the device structure and cathode material. Finally, the power conversion efficiency showed a maximum (1.5%) with the p-i-n structure and a Mg:Ag cathode under Air Mass 1.5 global solar conditions.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Tetsuya TAIMA, Masayuki CHIKAMATSU, Yuji YOSHIDA, Kazuhiro SAITO, Kiyoshi YASE, "Effects of Cathode Materials on Organic p-i-n Heterojunction Photovoltaic Cells" in IEICE TRANSACTIONS on Electronics,
vol. E87-C, no. 12, pp. 2045-2048, December 2004, doi: .
Abstract: We fabricated organic p-n heterojunction, p-i-n heterojunction and all-i-layer photovoltaic cells of a zinc phthalocyanine (ZnPc)/1:1 codeposition (ZnPc:C60)/C60 structure with Al cathode. We investigated the effects of the device structure and the cathode material on the photovoltaic properties. The thickness of the i-layer was changed as 0 nm (= p-n heterojunction), 10 nm (= p-i-n heterojunction) or 50 nm (= all-i-layer) with the total thickness of 50 nm. We also changed cathode materials from Al to low-workfunction Mg:Ag electrode. Photovoltaic properties, i.e., short-circuit current density, fill factor and power conversion efficiency, were strongly influenced by the device structure and cathode material. Finally, the power conversion efficiency showed a maximum (1.5%) with the p-i-n structure and a Mg:Ag cathode under Air Mass 1.5 global solar conditions.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_12_2045/_p
Copy
@ARTICLE{e87-c_12_2045,
author={Tetsuya TAIMA, Masayuki CHIKAMATSU, Yuji YOSHIDA, Kazuhiro SAITO, Kiyoshi YASE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of Cathode Materials on Organic p-i-n Heterojunction Photovoltaic Cells},
year={2004},
volume={E87-C},
number={12},
pages={2045-2048},
abstract={We fabricated organic p-n heterojunction, p-i-n heterojunction and all-i-layer photovoltaic cells of a zinc phthalocyanine (ZnPc)/1:1 codeposition (ZnPc:C60)/C60 structure with Al cathode. We investigated the effects of the device structure and the cathode material on the photovoltaic properties. The thickness of the i-layer was changed as 0 nm (= p-n heterojunction), 10 nm (= p-i-n heterojunction) or 50 nm (= all-i-layer) with the total thickness of 50 nm. We also changed cathode materials from Al to low-workfunction Mg:Ag electrode. Photovoltaic properties, i.e., short-circuit current density, fill factor and power conversion efficiency, were strongly influenced by the device structure and cathode material. Finally, the power conversion efficiency showed a maximum (1.5%) with the p-i-n structure and a Mg:Ag cathode under Air Mass 1.5 global solar conditions.},
keywords={},
doi={},
ISSN={},
month={December},}
Copy
TY - JOUR
TI - Effects of Cathode Materials on Organic p-i-n Heterojunction Photovoltaic Cells
T2 - IEICE TRANSACTIONS on Electronics
SP - 2045
EP - 2048
AU - Tetsuya TAIMA
AU - Masayuki CHIKAMATSU
AU - Yuji YOSHIDA
AU - Kazuhiro SAITO
AU - Kiyoshi YASE
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2004
AB - We fabricated organic p-n heterojunction, p-i-n heterojunction and all-i-layer photovoltaic cells of a zinc phthalocyanine (ZnPc)/1:1 codeposition (ZnPc:C60)/C60 structure with Al cathode. We investigated the effects of the device structure and the cathode material on the photovoltaic properties. The thickness of the i-layer was changed as 0 nm (= p-n heterojunction), 10 nm (= p-i-n heterojunction) or 50 nm (= all-i-layer) with the total thickness of 50 nm. We also changed cathode materials from Al to low-workfunction Mg:Ag electrode. Photovoltaic properties, i.e., short-circuit current density, fill factor and power conversion efficiency, were strongly influenced by the device structure and cathode material. Finally, the power conversion efficiency showed a maximum (1.5%) with the p-i-n structure and a Mg:Ag cathode under Air Mass 1.5 global solar conditions.
ER -